Triple Sensing Current Margin for Maintainable MRAM Yield at Sub-100% Tunnel Magnetoresistance Ratio

2020 ◽  
pp. 1-1
Author(s):  
Hao Cai ◽  
Menglin Han ◽  
Yongliang Zhou ◽  
Bo Liu ◽  
Lirida Alves de Barros Naviner
Author(s):  
Zhao Chen ◽  
Guojun Li ◽  
Haidi Wang ◽  
Qiong Tang ◽  
ZhongJun Li

Phosphorene-based device with fcc Co(111) electrodes shows excellent spin transport characteristics: large tunnel magnetoresistance ratio and stable spin injection efficiency.


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