scholarly journals Extremely Large Non-equilibrium Tunnel Magnetoresistance Ratio in CoRhMnGe Based Magnetic Tunnel Junction by Interface Modification

2019 ◽  
Vol 7 ◽  
Author(s):  
Yu Feng ◽  
Zhenxiang Cheng ◽  
Xiaotian Wang
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Interface Modification ◽  
Tunnel Magnetoresistance ◽  
Magnetoresistance Ratio ◽  
Non Equilibrium

High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

2017 ◽  
Vol 53 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Jiaqi Zhou ◽  
Weisheng Zhao ◽  
Shouzhong Peng ◽  
Junfeng Qiao ◽  
Jacques-Olivier Klein ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
First Principles ◽  
Magnetic Tunnel Junction ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
First Principles Study

Chemical diffusion: Another factor affecting the magnetoresistance ratio in Ta/CoFeB/MgO/CoFeB/Ta magnetic tunnel junction

2012 ◽  
Vol 101 (1) ◽  
pp. 012406 ◽  
Author(s):  
Y. Yang ◽  
W. X. Wang ◽  
Y. Yao ◽  
H. F. Liu ◽  
H. Naganuma ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Chemical Diffusion ◽  
Magnetoresistance Ratio

Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction

2011 ◽  
Vol 25 (8) ◽  
pp. 2573-2576
Author(s):  
A. N. Useinov ◽  
N. K. Useinov ◽  
L. R. Tagirov ◽  
J. Kosel
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
Resonant Tunnel

scholarly journals Tunnel Magnetoresistance of Fe3O4/MgO/Fe Nanostructures

2011 ◽  
Vol 2011 ◽  
pp. 1-3
Author(s):  
S. G. Chigarev ◽  
E. M. Epshtein ◽  
I. V. Malikov ◽  
G. M. Mikhailov ◽  
P. E. Zilberman
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetic Fields ◽  
Tunnel Junction ◽  
Magnetic Energy ◽  
Magnetic Tunnel Junction ◽  
Tunnel Magnetoresistance ◽  
Unidirectional Anisotropy ◽  
Layer Orientation ◽  
Layer Magnetization

A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.

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