scholarly journals Reducing Multiplexing Artifacts in Multi-Pinhole SPECT With a Stacked Silicon-Germanium System: A Simulation Study

2014 ◽  
Vol 33 (12) ◽  
pp. 2342-2351 ◽  
Author(s):  
Lindsay C. Johnson ◽  
Sepideh Shokouhi ◽  
Todd E. Peterson
Keyword(s):  
Simulation Study ◽  
Silicon Germanium ◽  
Pinhole Spect ◽  
System A

SIMULATION STUDY ON NON-HOMOGENOUS SYSTEM OF NON-INVASIVE ERT USING COMSOL MULTIPHYSICS

2015 ◽  
Vol 77 (17) ◽  
Author(s):  
Yasmin Abdul Wahab ◽  
Ruzairi Abdul Rahim ◽  
Mohd Hafiz Fazalul Rahiman ◽  
Leow Pei Ling ◽  
Suzzana Ridzuan Aw ◽  
...  
Keyword(s):  
Finite Element ◽  
Simulation Study ◽  
Direct Contact ◽  
Comsol Multiphysics ◽  
Finite Element Software ◽  
Non Invasive ◽  
System A ◽  
Process Tomography ◽  
Gas Medium ◽  
Air Medium

The non-invasive sensing technique is one of the favourite sensing techniques applied in the process tomography because it has not a direct contact with the medium of interest. The objective of this paper is to analyse the simulation of the non-homogenous system of the non-invasive ERT using finite element software; COMSOL Multiphysics. In this simulation, the liquid-air medium is chosen as the non-homogenous system. A different analysis of the non-homogenous system in term of the different position of the single air, different size of the single air and the multiple air inside the vessel were investigated in this paper. As a result, the location, size and multiple air inside the pipe will influence the output of the non-invasive ERT system. A liquid-gas medium of non-homogenous ERT system will have a good response if the air is located near the source, the size of the air is large enough and it has multiple air locations inside the pipe.

Structural and Compositional Study of Sil-xGex Multilayer Structures Using Medium Energy Ion Scattering

1995 ◽  
Vol 379 ◽  
Author(s):  
P.K. Hucknall ◽  
S. Sugden ◽  
C.J. Sofield ◽  
T.C.Q Noakes ◽  
C.F. Mcconville
Keyword(s):  
Silicon Germanium ◽  
Chemical Vapour ◽  
Depth Resolution ◽  
Surface Region ◽  
Medium Energy ◽  
Ion Scattering ◽  
Individual Layer ◽  
Rutherford Back Scattering ◽  
System A ◽  
Medium Energy Ion Scattering

ABSTRACTThe ability to determine structural and compositional information from the sub-surface region of a semiconductor material has been demonstrated using a new time-of-flight medium energy ion scattering spectroscopy (ToF-MEISS) system. A series of silicon-silicon/germanium (Si/Sil-xGex) hetero-structure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapour deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Sil-xGex can be uniquely identified with a depth resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition and the results compared with conventional Rutherford back-scattering spectrometry (RBS).

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