Monte Carlo Analyses of the NEO Beam Electron Beam Facility for Space Solar Cell Radiation Qualification

2010 ◽  
Author(s):  
Scott R. Messenger ◽  
Jeffrey H. Warner ◽  
Roberto Uribe ◽  
Robert J. Walters
Keyword(s):  
Monte Carlo ◽  
Electron Beam ◽  
Solar Cell ◽  
Beam Electron ◽  
Space Solar Cell

Monte Carlo analysis of the NEO Beam electron beam facility

2010 ◽  
Author(s):  
S. R. Messenger ◽  
J. H. Warner ◽  
K. Trautz ◽  
R. Uribe ◽  
R. J. Walters
Keyword(s):  
Monte Carlo ◽  
Electron Beam ◽  
Monte Carlo Analysis ◽  
Beam Electron

Large scale purification of metallurgical silicon for solar cell by using electron beam melting

2012 ◽  
Vol 351 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Tong Liu ◽  
Zhiyuan Dong ◽  
Youwen Zhao ◽  
Jun Wang ◽  
Teng Chen ◽  
...  
Keyword(s):  
Electron Beam ◽  
Solar Cell ◽  
Electron Beam Melting ◽  
Large Scale ◽  
Metallurgical Silicon

Holes drilling in gold and silver decahedral nanoparticles by the convergent beam electron diffraction electron beam

2014 ◽  
Vol 169 (10) ◽  
pp. 838-844 ◽  
Author(s):  
Samuel Tehuacanero-Cuapa ◽  
José Reyes-Gasga ◽  
Etienne F. Brès ◽  
Rodolfo Palomino-Merino ◽  
Ramiro García-García
Keyword(s):  
Electron Beam ◽  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Diffraction Electron ◽  
Convergent Beam

Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Distribution ◽  
Electron Energy ◽  
Electron Beam Lithography ◽  
Energy Deposition ◽  
Si Substrate ◽  
Positive Resist

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.

Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation

2009 ◽  
Vol 49 (9-11) ◽  
pp. 972-976 ◽  
Author(s):  
Mauro Ciappa ◽  
Luigi Mangiacapra ◽  
Maria Stangoni ◽  
Stephan Ott ◽  
Wolfgang Fichtner
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Depth Distribution ◽  
Electric Cables
Sign in / Sign up

Export Citation Format

Share Document