Experimental Study on the Short-Circuit Failure Mechanism of Cumulative Discharge in Gas Discharge Tube

Author(s):  
Lingyun Cheng ◽  
Weijiang Chen ◽  
Nianwen Xiang ◽  
Kejie Li ◽  
Kai Bian ◽  
...  
Author(s):  
Lingyun Cheng ◽  
Nianwen Xiang ◽  
Kejie Li ◽  
Weijiang Chen ◽  
Kai Bian ◽  
...  

Abstract After cumulative discharge of gas discharge tube (GDT), it is easy to form a short circuit pathway between the two electrodes, which increases the failure risk and causes severe influences on the protected object. To reduce the failure risk of GDT and improve cumulative discharge times before failure, this work aims to suppress the formation of two short-circuit pathways by optimizing the tube wall structure, the electrode materials and the electrode structure. A total of five improved GDT samples are designed by focusing on the insulation resistance change that occurs after the improvement; then, by combining these designs with the microscopic morphology changes inside the cavity and the differences in deposition composition, the reasons for the differences in the GDT failure risk are also analyzed. The experimental results show that compared with GDT of traditional structure and material, the method of adding grooves at both ends of the tube wall can effectively block the deposition pathway of the tube wall, and the cumulative discharge times before device failure are increased by 149%. On this basis, when the iron-nickel electrode is replaced with a tungsten-copper electrode, the difference in the electrode’s surface splash characteristics further extends the discharge times before failure by 183%. In addition, when compared with the traditional electrode structure, the method of adding an annular structure at the electrode edge to block the splashing pathway for the particles on the electrode surface shows no positive effect, and the cumulative discharge times before the failure of the two structures are reduced by 22.8% and 49.7% respectively. Among these improved structures, the samples with grooves at both ends of the tube wall and tungsten-copper as their electrode material have the lowest failure risk.


2017 ◽  
Vol 18 (3) ◽  
pp. 569-574 ◽  
Author(s):  
Jae-Il Choi ◽  
Seyyed Mohammad Hasheminia ◽  
Heoung-Jae Chun ◽  
Jong-Chan Park

1997 ◽  
Vol 8 (2) ◽  
pp. 39-49
Author(s):  
Yasuaki Goto ◽  
Osamu Joh ◽  
Takuji Shibata

2020 ◽  
Vol 27 (11) ◽  
pp. 114502
Author(s):  
Xiaoliang Yao ◽  
Li Lin ◽  
Vikas Soni ◽  
Eda Gjika ◽  
Jonathan H. Sherman ◽  
...  

2013 ◽  
Vol 740-742 ◽  
pp. 962-965
Author(s):  
Akio Takatsuka ◽  
Yasunori Tanaka ◽  
Koji Yano ◽  
Tsutomu Yatsuo ◽  
Kazuo Arai

We investigated the short-circuit capabilities of 1.2 kV normally-off SiC buried gate static induction transistors (SiC-BGSITs). The maximum short-circuit energy was found to be 35.6 J/cm2, which is twice that of normally-on SiC-BGSITs and 3.3–5.6 times higher than that of the Si-IGBTs. The maximum short-circuit time was 590 μs. It is concluded that these high short-circuit capabilities result from saturation characteristics of the normally-off SiC-BGSITs.


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