High Voltage Gain 4H-SIC CMOS Technology Featuring LOCal Oxidation of SiC (LOCOSiC) Isolation and Balanced Gate Dielectric

Author(s):  
Bing-Yue Tsui ◽  
Chia-Lung Hung ◽  
Ya-Ru Jhuang ◽  
Yi-Ting Huang ◽  
Jung-Chien Cheng ◽  
...  
2021 ◽  
Vol 1964 (5) ◽  
pp. 052016
Author(s):  
L. Annie Isabella ◽  
Y. Alexander Jeevanantham ◽  
Chandla Ellis ◽  
R. Kameshwaran

Author(s):  
Jagabar Sathik Mohamed Ali ◽  
Marif Daula Siddique ◽  
Saad Mekhilef ◽  
Yongheng Yang ◽  
Yam Siwakoti ◽  
...  

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