Crystal Growth and Electrical Properties of Pb((Zn1/3Nb2/3)0.91Ti0.09)O3 Single Crystals Produced by Solution Bridgman Method

2005 ◽  
Vol 81 (11) ◽  
pp. 2785-2788 ◽  
Author(s):  
Kouichi Harada ◽  
Senji Shimanuki ◽  
Tsuyoshi Kobayashi ◽  
Shiroh Saitoh ◽  
Yohachi Yamashita
Keyword(s):  
Crystal Growth ◽  
Electrical Properties ◽  
Single Crystals ◽  
Bridgman Method

Crystal growth and electrical properties of high-Tc relaxor-PT system single crystals

2001 ◽  
Vol 261 (1) ◽  
pp. 205-212 ◽  
Author(s):  
N. Ichinose ◽  
Y. Saigo ◽  
Y. Hosono ◽  
Y. Yamashita
Keyword(s):  
Crystal Growth ◽  
Electrical Properties ◽  
Single Crystals ◽  
High Tc

Crystal growth of rare-earth-doped ternary potassium lead chloride single crystals by the Bridgman method

2004 ◽  
Vol 26 (4) ◽  
pp. 359-363 ◽  
Author(s):  
M Voda ◽  
M Al-Saleh ◽  
G Lobera ◽  
R Balda ◽  
J Fernández
Keyword(s):  
Rare Earth ◽  
Crystal Growth ◽  
Single Crystals ◽  
Bridgman Method ◽  
Lead Chloride ◽  
Rare Earth Doped

Crystal growth and electrical properties of Sb-doped SnO2 single crystals

1990 ◽  
Vol 118 (2) ◽  
pp. K91-K94 ◽  
Author(s):  
G. Behr ◽  
G. Krabbes ◽  
J. Werner ◽  
P. Dordor ◽  
J.-P. Doumerc
Keyword(s):  
Crystal Growth ◽  
Electrical Properties ◽  
Single Crystals

Some experiments on the crystal growth and characterization of Fe17R2 (R = rare earth) single crystals by the Bridgman method

1997 ◽  
Vol 171 (1-2) ◽  
pp. 125-130 ◽  
Author(s):  
A.A. Coelho ◽  
S. Gama ◽  
C.A. Ribeiro ◽  
N.L. Sanjurjo ◽  
Ch.V. Mohan ◽  
...  
Keyword(s):  
Rare Earth ◽  
Crystal Growth ◽  
Single Crystals ◽  
Bridgman Method

Crystal growth and electrical properties of Pb(Yb1/2Nb1/2)O3–PbTiO3 perovskite single crystals

2002 ◽  
Vol 234 (2-3) ◽  
pp. 415-420 ◽  
Author(s):  
Shujun Zhang ◽  
Paul W. Rehrig ◽  
Clive Randall ◽  
Thomas R. Shrout
Keyword(s):  
Crystal Growth ◽  
Electrical Properties ◽  
Single Crystals

Heteroepitaxial Growth of Sic on Si - Highly Mismatched System -

1988 ◽  
Vol 116 ◽  
Author(s):  
Hiroyuki Matsunami
Keyword(s):  
Crystal Growth ◽  
Electrical Properties ◽  
Single Crystals ◽  
Lattice Mismatch ◽  
Smooth Surfaces ◽  
Heteroepitaxial Growth ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Antiphase Domains

AbstractSingle crystals of cubic(beta) SiC were heteroepitaxially grown on Si to ameliorate the large lattice mismatch of 20 %. The structure and the role of the carbonized layer used for crystal growth are discussed. Single crystals were successfully grown on Si(100) and(111). Antiphase domains on Si(100) were examined to obtain smooth surfaces. The use of Si(100) off-axis substrates oriented towards [011] allowed the successufulelimination of the antiphase domains. Anisotropy was found in the electrical properties of SiC on off-axis substrates. Possible applications are described.

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