Heteroepitaxial Growth of Sic on Si - Highly Mismatched System -

1988 ◽  
Vol 116 ◽  
Author(s):  
Hiroyuki Matsunami
Keyword(s):  
Crystal Growth ◽  
Electrical Properties ◽  
Single Crystals ◽  
Lattice Mismatch ◽  
Smooth Surfaces ◽  
Heteroepitaxial Growth ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Antiphase Domains

AbstractSingle crystals of cubic(beta) SiC were heteroepitaxially grown on Si to ameliorate the large lattice mismatch of 20 %. The structure and the role of the carbonized layer used for crystal growth are discussed. Single crystals were successfully grown on Si(100) and(111). Antiphase domains on Si(100) were examined to obtain smooth surfaces. The use of Si(100) off-axis substrates oriented towards [011] allowed the successufulelimination of the antiphase domains. Anisotropy was found in the electrical properties of SiC on off-axis substrates. Possible applications are described.

Growth of GaAs on Si and its Application to FETs and LEDs

1986 ◽  
Vol 67 ◽  
Author(s):  
Masahiro Akiyama ◽  
Yoshihiro Kawarada ◽  
Seiji Nishi ◽  
Takashi Ueda ◽  
Katsuzo Kaminishi
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Antiphase Domain ◽  
Thin Layers ◽  
The Other ◽  
Heteroepitaxial Growth ◽  
Si Substrates ◽  
Large Lattice ◽  
Strained Layer Superlattice ◽  
Large Lattice Mismatch

In recent years, the heteroepitaxial growth of GaAs layers on Si substrates has been gained an increasing interest [1 - 14]. GaAs is one of the most important III-V materials and has been well studied and used for optical and electrical devices. On the other hand, with Si we have large size wafers of superior quality and sophisticated technologies and Si is a main material for semiconductor industries. Therefore, GaAs/Si system has possibilities for realizing new types of functional devices or ICs with GaAs and Si devices. This system, however, has two serious problems. One is the large lattice mismatch of about 4 % between these materials and the other is the polar on nonpolar problem i.e., the formation of an antiphase domain disorder. It was reported that when (211)-oriented Si substrates were used, there was no problem of the formation of an antiphase domain structure 5. For growing materials on lattice mismatched substrates, it was reported that the thin layers deposited at low temperatures were effective to relax the lattice mismatches for the systems such as SiC on Si[15] and Si on saphire [16]. In GaAs/Si system, the Ge buffer layer has been used to relax the lattice mismatch[17 - 22] It was also reported that the composite strained layer superlattice with GaP/GaAsP and GaAsP/GaAs was very effective as a buffer layer[23 - 25].

Heteroepitaxial growth and structural analysis of epitaxial α–Fe2O3(1010) on TiO2(001)

2005 ◽  
Vol 20 (5) ◽  
pp. 1250-1256 ◽  
Author(s):  
Joshua R. Williams ◽  
Chongmin Wang ◽  
Scott A. Chambers
Keyword(s):  
Lattice Mismatch ◽  
High Energy ◽  
Unit Cell ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Pole Figures ◽  
Large Lattice ◽  
Large Lattice Mismatch

We grew epitaxial α–Fe2O3(1010) on TiO2(001) rutile by oxygen plasma-assisted molecular-beam epitaxy. High-resolution transmission electron microscopy (HRTEM), reflection high-energy electron diffraction (RHEED), and x-ray diffraction pole figures confirm that the film is composed of four different in-plane orientations rotated by 90° relative to one another. For a given Fe2O3 unit cell, the lattice mismatch along the parallel [0001]Fe2O3 and [100]TiO2 directions is nominally +67%. However, due to a 3-fold repetition of the slightly distorted square symmetry of anion positions within the Fe2O3 unit cell, there is a coincidental anion alignment along the [0001]Fe2O3 and [100]TiO2 directions, which results in an effective lattice mismatch of only −0.02% along this direction. The lattice mismatch is nearly 10% in the orthogonal [1120]Fe2O3 and [100]TiO2 directions. The film is highly ordered and well registered to the substrate despite a large lattice mismatch in one direction. The film grows in registry with the substrate along the parallel [0001]Fe2O3 and [100]TiO2 directions and nucleates dislocations along the orthogonal [1120]Fe2O3 [100]TiO2 directions.

scholarly journals Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

2021 ◽  
Author(s):  
Mingming Jiang ◽  
Yang Liu ◽  
Ruiming Dai ◽  
Kai Tang ◽  
Peng Wan ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Lattice Mismatch ◽  
Semiconductor Materials ◽  
Large Lattice ◽  
Ag Nanowires ◽  
Large Lattice Mismatch ◽  
Enhanced Luminescence ◽  
Indirect Band Gap

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

1987 ◽  
Vol 102 ◽  
Author(s):  
D. L. Doering ◽  
F. S. Ohuchi ◽  
W. Jaegermann ◽  
B. A. Parkinson
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Layered Material ◽  
Tungsten Disulfide ◽  
Layer By Layer ◽  
Metal Contacts ◽  
Layered Semiconductor ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

III-V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material

1991 ◽  
Vol 4 (6) ◽  
pp. 217-219 ◽  
Author(s):  
S. Aboulhouda ◽  
J. P. Vilcot ◽  
M. Razeghi ◽  
D. Decoster ◽  
M. Francois ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Large Lattice ◽  
Large Lattice Mismatch

Crystal growth and electrical properties of high-Tc relaxor-PT system single crystals

2001 ◽  
Vol 261 (1) ◽  
pp. 205-212 ◽  
Author(s):  
N. Ichinose ◽  
Y. Saigo ◽  
Y. Hosono ◽  
Y. Yamashita
Keyword(s):  
Crystal Growth ◽  
Electrical Properties ◽  
Single Crystals ◽  
High Tc

Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

2002 ◽  
Vol 737 ◽  
Author(s):  
E. Ertekin ◽  
P.A. Greaney ◽  
T. D. Sands ◽  
D. C. Chrzan
Keyword(s):  
Simple Model ◽  
Misfit Dislocation ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Equilibrium Analysis ◽  
Misfit Dislocations ◽  
Model Based ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

scholarly journals Epitaxial Growth of Germanium on Silicon for Light Emitters

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Chengzhao Chen ◽  
Cheng Li ◽  
Shihao Huang ◽  
Yuanyu Zheng ◽  
Hongkai Lai ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Infrared ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Sige Layer ◽  
Infrared Light ◽  
Multiple Quantum ◽  
Light Emitters ◽  
Large Lattice ◽  
Large Lattice Mismatch

This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

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