Ge/Si Multilayer Epitaxy and Removal of Dislocations from Ge-nanosheet-channel MOSFETs

Horizontally stacked pure-Ge-nanosheet gate-all-around field-effect transistors (GAA FETs) were developed in this study. Large lattice mismatch Ge/Si multilayers were intentionally grown as the starting material rather than Ge/GeSi multilayers to acquire the benefits of the considerable difference in material properties of Ge and Si for realising selective etching. Flat Ge/Si multilayers were grown at a low temperature to preclude island growth. The shape of Ge nanosheets was almost retained after etching owing to the excellent selectivity. Additionally, dislocations were observed in suspended Ge nanosheets because of the absence of a Ge/Si interface and the disappearance of the dislocation-line tension force owing to the elongation of misfit dislocation at the interface. Forming gas annealing of the suspended Ge nanosheets resulted in a significant increase in the glide force compared to the dislocation-line tension force; the dislocations were easily removed because of this condition and the small size of the nanosheets. Based on this structure, a new mechanism of dislocation removal from suspended Ge nanosheet structures by annealing was described, which resulted in the structures exhibiting excellent gate control and electrical properties.

N+ Irradiation and Substrate-Induced Variability in the Metamagnetic Phase Transition of FeRh Films

Metamagnetic FeRh has been the focus of numerous studies for its highly unique antiferromagnetic (AF) to ferromagnetic (FM) metamagnetic transition. While this phase transition usually occurs above room temperature (often Tc > 400 K), both ion irradiation and strained epitaxial growth have been used to bring it to applicable temperatures. Nevertheless, cross sample variability is pervasive in these studies. Here we explore the optical and magnetic properties of 35 nm thick FeRh grown by magnetron sputter deposition simultaneously on two different single crystal substrates: epitaxially on MgO (001) and highly strained with large lattice mismatch on Al2O3 (1000). We then irradiate the epitaxial film with 5 keV N+ ions to introduce disorder (and to a lesser extent, modify chemical composition) without effecting the surface morphology. We find that the phase-transitional properties of both films are strikingly different due to the large lattice mismatch, despite being grown in tandem with nominally identical growth conditions including Fe/Rh stoichiometry, pressure, and temperature. We observe that N+ implantation lowers Tc by ~60 K, yielding a sample with nominally the same transition temperature as the non-epitaxial film on sapphire, yet with a significantly increased magnetic moment, a larger magnetization change and a more abrupt transition profile. We attribute these differences to the Volmer-Weber type growth mode induced by the sapphire substrate and the resulting rougher surface morphology.

Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

Interstitial Atom Engineering in Magnetic Materials

Interstitial light elements play an important role in magnetic materials by improving the magnetic properties through changes of the unit cell volume or through orbital hybridization between the magnetic and interstitial atoms. In this review focusing on the effects of interstitial atoms in Mn-based compounds, which are not well researched, the studies of interstitial atoms in three kinds of magnetic materials (rare-earth Fe-, Mn-, and rare-earth-based compounds) are surveyed. The prominent features of Mn-based compounds are interstitial-atom-induced changes or additional formation of magnetism—either a change from antiferromagnetism (paramagnetism) to ferromagnetism or an additional formation of ferromagnetism. It is noted that in some cases, ferromagnetic coupling can be abruptly caused by a small number of interstitial atoms, which has been overlooked in previous research on rare-earth Fe-based compounds. We also present candidates of Mn compounds, which enable changes of the magnetic state. The Mn-based compounds are particularly important for the easy fabrication of highly functional magnetic devices, as they allow on-demand control of magnetism without causing a large lattice mismatch, among other advantages.

Insights into the vacancy behaviour at the interface of As–Sb lateral heterostructures

The interfacial vacancy behaviour was investigated in an LHS with a large lattice mismatch to gain insights into defect and interface engineering.

Coherent phase equilibria of systems with large lattice mismatch

The elastic contribution to the Gibbs energy, representing the elastic energy stored in the coherent boundary, is formulated based on the linear elasticity theory in both the small and large deformation regimes. Several case studies have been examined in cubic systems, and the proposed formalism is showing an appropriate predictive capability.