Preparation and Characterization of High-Purity Metal Fluorides for Photonic Applications

2011 ◽  
Vol 94 (9) ◽  
pp. 2896-2901 ◽  
Author(s):  
Wendy M. Patterson ◽  
Peter C. Stark ◽  
Thomas M. Yoshida ◽  
Mansoor Sheik-Bahae ◽  
Markus P. Hehlen
Keyword(s):  
High Purity ◽  
High Purity Metal ◽  
Metal Fluorides

Approaches to the accurate characterization of high purity metal fluorides and fluoride glasses

1990 ◽  
Vol 106 (1) ◽  
pp. 51-60 ◽  
Author(s):  
E.S. Beary ◽  
P.J. Paulsen ◽  
T.C. Rains ◽  
K.J. Ewing ◽  
J. Jaganathan ◽  
...  
Keyword(s):  
High Purity ◽  
Fluoride Glasses ◽  
High Purity Metal ◽  
Metal Fluorides

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

Characterization of a 19 kDa α-Zein of High Purity

2005 ◽  
Vol 53 (3) ◽  
pp. 725-729 ◽  
Author(s):  
Vanessa Cabra ◽  
Roberto Arreguin ◽  
Amanda Galvez ◽  
Maricarmen Quirasco ◽  
Rafael Vazquez-duhalt ◽  
...  
Keyword(s):  
High Purity

Characterization of the Z luminescence system in high purity CdTe

1994 ◽  
Vol 26 (1) ◽  
pp. 1-5 ◽  
Author(s):  
A.V. Kvit ◽  
Y.V. Klevkov ◽  
S.R. Oktyabrsky ◽  
A.V. Tsikunov ◽  
B.G. Zhurkin
Keyword(s):  
High Purity

Application of HCl solutions for recovering the high purity metal from tin scrap by electrorefining

2012 ◽  
Vol 125-126 ◽  
pp. 55-63 ◽  
Author(s):  
Gergo Rimaszeki ◽  
Tibor Kulcsar ◽  
Tamas Kekesi
Keyword(s):  
High Purity ◽  
High Purity Metal

Characterization of high purity gallium

1987 ◽  
Vol 91 (1-6) ◽  
pp. 269-274 ◽  
Author(s):  
Gerhard Kudermann ◽  
Karl-Heinz Blaufu�
Keyword(s):  
High Purity

scholarly journals Multitechnique approach to trace characterization of high-purity materials - Gallium

1988 ◽  
Vol 93 (3) ◽  
pp. 400 ◽  
Author(s):  
S. Gangadharan ◽  
S. Natarajan ◽  
J. Arunachalam ◽  
S. Jaikumar ◽  
S.V. Burangey
Keyword(s):  
High Purity

Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs

1983 ◽  
Vol 54 (12) ◽  
pp. 6982-6988 ◽  
Author(s):  
M. Heiblum ◽  
E. E. Mendez ◽  
L. Osterling
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam
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