Inversion domain boundaries in Mn and Al dual-doped ZnO: Atomic structure and electronic properties

2017 ◽  
Vol 100 (9) ◽  
pp. 4252-4262 ◽  
Author(s):  
Joshua Hoemke ◽  
Eita Tochigi ◽  
Tetsuya Tohei ◽  
Hidehiro Yoshida ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Atomic Structure ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Doped Zno ◽  
Inversion Domain Boundaries

Structure and Properties of Inversion Domain Boundaries in β-Sic

1989 ◽  
Vol 159 ◽  
Author(s):  
W. R. L. Lambrecht ◽  
C. H. Lee ◽  
B. Segall
Keyword(s):  
Total Energy ◽  
Electronic Properties ◽  
Localized States ◽  
Diamond Structure ◽  
Structure And Properties ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries ◽  
Energy Of Formation ◽  
The Ideal

ABSTRACTThe structure of inversion domain boundaries in β-SiC (i.e. boundaries between domains with inverted Si and C positions) is investigated by means of a Keating model. For the (110) boundary, the relaxation of the C-C and Si-Si bonds towards the ideal bond lengths which occur in the diamond structure can basically be achieved by a rotation of neighboring Si-C bonds. For the (001) boundary, it is achieved by varying the spacing between the domains. The electronic properties and total energy of formation of the relaxed (110) boundary are studied by means of linear muffin-tin orbital calculations. The interface localized states in the semiconducting gap are mainly due to the Si-Si bonds and lead to a semimetallic situation near the interface.

The atomic structure of {101̄0} inversion domain boundaries in GaN/sapphire layers

1997 ◽  
Vol 82 (5) ◽  
pp. 2176-2183 ◽  
Author(s):  
V. Potin ◽  
P. Ruterana ◽  
G. Nouet
Keyword(s):  
Atomic Structure ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Atomic structure and energy of junctions between inversion domain boundaries and stacking faults in wurtzite GaN

2003 ◽  
Vol 0 (7) ◽  
pp. 2464-2469 ◽  
Author(s):  
J. Kioseoglou ◽  
A. Béré ◽  
G.P. Dimitrakopulos ◽  
A. Serra ◽  
G. Nouet ◽  
...  
Keyword(s):  
Atomic Structure ◽  
Stacking Faults ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Energetic and Electronic Properties of (0001) Inversion Domain Boundaries in ZnO

2017 ◽  
Vol 255 (4) ◽  
pp. 1700429 ◽  
Author(s):  
Siqian Li ◽  
Huaping Lei ◽  
Zhuo Wang ◽  
Jun Chen ◽  
Pierre Ruterana
Keyword(s):  
Electronic Properties ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

The Atomic Structure of Extended Defects in GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Ruterana ◽  
G. Nouet
Keyword(s):  
Grain Boundaries ◽  
Atomic Structure ◽  
Stacking Faults ◽  
Threading Dislocations ◽  
Extended Defects ◽  
High Angle ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries ◽  
Edge Dislocations

AbstractGaN layers contain large densities (1010 cm−2) of threading dislocations, nanopipes, (0001) and { 1120 } stacking faults, and { 1010 } inversion domains. Three configurations have been found for pure edge dislocations, mainly inside high angle grain boundaries where the 4 atom ring cores can be stabilized. Two atomic configurations, related by a 1/6 < 1010 > stair rod dislocation, have been observed for the { 1120 } stacking fault in (Ga-Al)N layers. For the {1010} inversion domain boundaries, a configuration corresponding to the Holt model was observed, as well as another with no N-N or Ga-Ga bonds.

The Atomic Structure of the {1010} Inversion Domains in GaN/Sapphire Layers

1997 ◽  
Vol 468 ◽  
Author(s):  
V. Potin ◽  
P. Ruterana ◽  
G. Nouet ◽  
A. Salvador ◽  
H. Morkoç
Keyword(s):  
Epitaxial Layer ◽  
Atomic Structure ◽  
Boundary Plane ◽  
Type Model ◽  
Image Simulation ◽  
Atomic Models ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
20 Nm ◽  
Inversion Domain Boundaries

ABSTRACTNanometric inversion domains in GaN/Al2O3 layers have been investigated using HREM. They were found to be limited by {1010} planes and to cross the entire epitaxial layer. It has been possible, using extensive image simulation and matching to discriminate between possible atomic models for the boundary plane. It is shown that the inversion domain boundaries correspond to a Holt type model containing wrong bonds (Ga-Ga, N-N), and in that plane, each atom exhibits two such bonds. This probably can explain the small size of the domains (5–20 nm).

scholarly journals Picometre-precision atomic structure of inversion domain boundaries in GaN

2016 ◽  
pp. 564-565
Author(s):  
Benedikt Haas ◽  
Robert A. McLeod ◽  
Thomas Auzelle ◽  
Bruno Daudin ◽  
Joël Eymery ◽  
...  
Keyword(s):  
Atomic Structure ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries
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