The Atomic Structure of Extended Defects in GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Ruterana ◽  
G. Nouet
Keyword(s):  
Grain Boundaries ◽  
Atomic Structure ◽  
Stacking Faults ◽  
Threading Dislocations ◽  
Extended Defects ◽  
High Angle ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries ◽  
Edge Dislocations

AbstractGaN layers contain large densities (1010 cm−2) of threading dislocations, nanopipes, (0001) and { 1120 } stacking faults, and { 1010 } inversion domains. Three configurations have been found for pure edge dislocations, mainly inside high angle grain boundaries where the 4 atom ring cores can be stabilized. Two atomic configurations, related by a 1/6 < 1010 > stair rod dislocation, have been observed for the { 1120 } stacking fault in (Ga-Al)N layers. For the {1010} inversion domain boundaries, a configuration corresponding to the Holt model was observed, as well as another with no N-N or Ga-Ga bonds.

Atomic structure and energy of junctions between inversion domain boundaries and stacking faults in wurtzite GaN

2003 ◽  
Vol 0 (7) ◽  
pp. 2464-2469 ◽  
Author(s):  
J. Kioseoglou ◽  
A. Béré ◽  
G.P. Dimitrakopulos ◽  
A. Serra ◽  
G. Nouet ◽  
...  
Keyword(s):  
Atomic Structure ◽  
Stacking Faults ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Oxygen incorporation in aluminum nitride via extended defects: Part III. Reevaluation of the polytypoid structure in the aluminum nitride-aluminum oxide binary system

1995 ◽  
Vol 10 (10) ◽  
pp. 2573-2585 ◽  
Author(s):  
Alistair D. Westwoord ◽  
Robert A. Youngman ◽  
Martha R. McCartney ◽  
Alasiair N. Cormack ◽  
Michael R. Notis
Keyword(s):  
Aluminum Nitride ◽  
Stacking Faults ◽  
Structural Rearrangement ◽  
Extended Defects ◽  
Structural Elements ◽  
Inversion Domain ◽  
Transmission Electron ◽  
New Variant ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

This paper extends the concepts that were developed to explain the structural rearrangement of the wurtzite AlN lattice due to incorporation of small amounts of oxygen, and to directly use them to assist in understanding the polytypoid structures. Conventional and high-resolution transmission electron microscopy, specific electron diffraction experiments, and atomistic computer simulations have been used to investigate the structural nature of the polytypoids. The experimental observations provide compelling evidence that polytypoid structures are not arrays of stacking faults, but are rather arrays of inversion domain boundaries (IDB's). A new model for the polytypoid structure is proposed with the basic repeat structural unit consisting of a planar IDB-P and a corrugated IDB. This model shares common structural elements with the model proposed by Thompson, even though in his model the polytypoids were described as consisting of stacking faults. Small additions (≃ 1000 ppm) of silicon were observed to have a dramatic effect on the polytypoid structure. First, it appears that the addition of Si causes the creation of a new variant of the planar IDB (termed IDB-P'), different from the IDB-P defect observed in the AlN-Al2O3 polytypoids; second, the addition of Si influences the structure of the corrugated IDB, such that it appears to become planar.

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Low Energy ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

Junction lines of inversion domain boundaries with stacking faults in GaN

2004 ◽  
Vol 70 (11) ◽  
Author(s):  
J. Kioseoglou ◽  
G. P. Dimitrakopulos ◽  
Ph. Komninou ◽  
H. M. Polatoglou ◽  
A. Serra ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Microstructral Investigations on GaN Films Grown by Laser Induced Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
H. Zhou ◽  
F. Phillipp ◽  
M. Gross ◽  
H. Schröder
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Threading Dislocations ◽  
Planar Defects ◽  
Sapphire Substrates ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Line Defects ◽  
Inversion Domain Boundaries

AbstractMicrostructural investigations on GaN films grown on SiC and sapphire substrates by laser induced molecular beam epitaxy have been performed. Threading dislocations with Burgers vectors of 1/3<1120>, 1/3<1123> and [0001] are typical line defects, predominantly the first type of dislocations. Their densities are typically 1.5×1010 cm−2 and 4×109 cm−2 on SiC and sapphire, respectively. Additionally, planar defects characterized as inversion domain boundaries lying on {1100} planes have been observed in GaN/sapphire samples with an inversion domain density of 4×109 cm−2. The inversion domains are of Ga-polarity with respect to the N-polarity of the adjacent matrix. However, GaN layers grown on SiC show Ga-polarity. Possible reasons for the different morphologies and structures of the films grown on different substrates are discussed. Based on an analysis of displacement fringes of inversion domains, an atomic model of the IDB-II with Ga-N bonds across the boundary was deduced. High resolution transmission electron microscopy (HRTEM) observations and the corresponding simulations confirmed the IDB-II structure determined by the analysis of displacement fringes.

The Nature of Oxygen-Related Polytypoids in the Aluminum Nitride-Aluminum Oxide System

1993 ◽  
Vol 319 ◽  
Author(s):  
R.A. Youngman
Keyword(s):  
Oxygen Content ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
Oxide System ◽  
Extended Defects ◽  
Low Oxygen ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Related Point ◽  
Inversion Domain Boundaries

AbstractPrevious investigations into the nature of polytypoid structures in the A1N-A12O3 and A1NSiO2 systems have concluded that these structures are comprised of ordered stacking faults which accommodate oxygen (and silicon) in the basic wurtzite (2H) AIN structure. The polytypoids are distinct chemical phases intimately related to the pure 2H AIN. More recent work in low oxygen content (<6 at.%) A1N has elucidated the evolution of oxygen-related point defects, and transformation of these defects into extended structures. These studies have shown that all oxygenrelated extended defects in the A1N-A12O3 system are inversion domain boundaries (IDBs).We present here extensions of the concepts developed from low oxygen content studies which lead to direct application in understanding the polytypoid structures. High resolution electron microscopy (HREM), specific electron diffraction experiments, and structural models are utilized to prove that the polytypoid structures are not based on stacking faults, but, in fact are based on IDBs.

Structural transition of inversion domain boundaries through interactions with stacking faults in epitaxial GaN

2001 ◽  
Vol 64 (24) ◽  
Author(s):  
G. P. Dimitrakopulos ◽  
Ph. Komninou ◽  
J. Kioseoglou ◽  
Th. Kehagias ◽  
E. Sarigiannidou ◽  
...  
Keyword(s):  
Structural Transition ◽  
Stacking Faults ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

Inversion domain boundaries in Mn and Al dual-doped ZnO: Atomic structure and electronic properties

2017 ◽  
Vol 100 (9) ◽  
pp. 4252-4262 ◽  
Author(s):  
Joshua Hoemke ◽  
Eita Tochigi ◽  
Tetsuya Tohei ◽  
Hidehiro Yoshida ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Atomic Structure ◽  
Inversion Domain ◽  
Domain Boundaries ◽  
Doped Zno ◽  
Inversion Domain Boundaries
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