Low‐temperature reactive sintering of carbon vacant high‐entropy carbide ceramics with in‐situ formed silicon carbide

2021 ◽  
Author(s):  
Guo‐Wei Lin ◽  
Ji‐Xuan Liu ◽  
Yuan Qin ◽  
Guo‐Jun Zhang
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Reactive Sintering ◽  
High Entropy ◽  
Carbide Ceramics

Low-temperature joining of silicon carbide via Al-air in situ reaction

2019 ◽  
Vol 45 (18) ◽  
pp. 24932-24935
Author(s):  
Jia-Xiang Xue ◽  
Rui Shu ◽  
Ye-Hong Liao ◽  
Jian-Han Zhai ◽  
Hai-Bin Ma ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
In Situ Reaction

Low‐temperature sintering of single‐phase, high‐entropy carbide ceramics

2019 ◽  
Vol 102 (12) ◽  
pp. 7217-7224 ◽  
Author(s):  
Lun Feng ◽  
William G. Fahrenholtz ◽  
Gregory E. Hilmas
Keyword(s):  
Low Temperature ◽  
Single Phase ◽  
Low Temperature Sintering ◽  
High Entropy ◽  
Carbide Ceramics

scholarly journals Optimal preparation of high-entropy boride-silicon carbide ceramics

2020 ◽  
Author(s):  
Yan Zhang ◽  
Shi-Kuan Sun ◽  
Wei-Ming Guo ◽  
Liang Xu ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbothermal Reduction ◽  
Powder Processing ◽  
Full Density ◽  
High Entropy ◽  
Sic Ceramics ◽  
Reduction Methods ◽  
Borothermal Reduction ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

Abstract High-entropy boride-silicon carbide (HEB-SiC) ceramics were fabricated by using boride-based powders prepared from borothermal and boro/carbothermal reduction methods. The effects of processing routes (borothermal reduction and boro/carbothermal reduction) of HEB powders were examined. HEB-SiC ceramics with nearly relatively full density (>98%) were prepared by spark plasma sintering at 2000oC. It was demonstrated that the addition of SiC led to slightly coarsening of the microstructure. The HEB-SiC ceramics prepared from boro/carbothermal reduction powders showed the fine-grained microstructure and higher Vickers’ hardness but lower fracture toughness values as compared with the same composition prepared from borothermal reduction powders. These results indicated that the selection of the powder processing method and the addition of SiC phase could contribute to the optimal preparation of high-entropy boride-based ceramics.

In Situ Study of Low-Temperature Irradiation-Induced Defects in Silicon Carbide

2019 ◽  
Vol 48 (6) ◽  
pp. 3849-3853
Author(s):  
S. M. Tunhuma ◽  
F. D. Auret ◽  
H. T. Danga ◽  
J. M. Nel ◽  
M. M. Diale
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
In Situ Study ◽  
Temperature Irradiation ◽  
Induced Defects ◽  
Irradiation Induced Defects
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