Ordered silicon nanostructures by ion beam induced glancing angle deposition

2007 ◽  
Vol 25 (3) ◽  
pp. 833 ◽  
Author(s):  
Christian Patzig ◽  
Bernd Rauschenbach ◽  
Wilfried Erfurth ◽  
Alexey Milenin
Keyword(s):  
Ion Beam ◽  
Glancing Angle Deposition ◽  
Silicon Nanostructures ◽  
Glancing Angle ◽  
Angle Deposition

Ion-Beam Assisted Glancing Angle Deposition for Relative Humidity Sensors

2008 ◽  
Vol 8 (9) ◽  
pp. 1521-1522 ◽  
Author(s):  
Michael T. Taschuk ◽  
Jason B. Sorge ◽  
John J. Steele ◽  
Michael J. Brett
Keyword(s):  
Relative Humidity ◽  
Ion Beam ◽  
Glancing Angle Deposition ◽  
Humidity Sensors ◽  
Glancing Angle ◽  
Angle Deposition

scholarly journals Three-dimensional structural comparison of tantalum glancing angle deposition thin films by FIB-SEM

2019 ◽  
Vol 8 (2) ◽  
pp. 305-315
Author(s):  
Tobias Ott ◽  
Diego Roldán ◽  
Claudia Redenbach ◽  
Katja Schladitz ◽  
Michael Godehardt ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Glancing Angle Deposition ◽  
Infrared Sensors ◽  
Geometric Information ◽  
Tantalum Films ◽  
Glancing Angle ◽  
Nano Rods ◽  
Angle Deposition

Abstract. Thin tantalum films generated by glancing angle deposition serve as functional optical layers, for instance as absorption layers for ultrathin infrared sensors. They consist of nano-rods whose dimensions and distribution influence the optical properties of the thin film. Serial sectioning by a focused ion beam combined with scanning electron microscopy of the slices generates stacks of highly resolved images of this nanostructure. Dedicated image processing reconstructs the spatial structure from this stack such that 3-D image analysis yields geometric information that can be related to the optical performance.

Ordered Si-Ge nanostructures by glancing angle deposition via ion beam sputtering

2011 ◽  
Vol 1329 ◽  
Author(s):  
Jens Bauer ◽  
Michael Weise ◽  
Chinmay Khare ◽  
Bernd Rauschenbach
Keyword(s):  
Temporal Evolution ◽  
Ion Beam ◽  
Glancing Angle Deposition ◽  
Ion Beam Sputtering ◽  
Substrate Preparation ◽  
Sequential Deposition ◽  
Glancing Angle ◽  
Beam Sputtering ◽  
Distinct Morphology ◽  
Angle Deposition

ABSTRACTGlancing angle deposition (GLAD) was used to deposit ordered arrangements of Si/Ge-nanocolumns applying the ion beam sputter technique. After substrate preparation by electron beam lithography as well as nanosphere lithography the deposition behavior of GLAD nanocolumns in regular arrangements with different symmetries was studied. The nanocolumns exhibited distinct morphology regions which are correlated to their temporal evolution during deposition. Furthermore, the customization of the column morphology by non-uniform substrate rotation is considered. Axial Si/Ge-heterojunctions were incorporated by sequential deposition.

Photo‐Induced Self‐Cleaning and Wettability in TiO 2 Nanocolumn Arrays Obtained by Glancing‐Angle Deposition with Sputtering

2021 ◽  
pp. 2100071
Author(s):  
Fernando Fresno ◽  
María U. González ◽  
Lidia Martínez ◽  
Marcial Fernández‐Castro ◽  
Mariam Barawi ◽  
...  
Keyword(s):  
Glancing Angle Deposition ◽  
Glancing Angle ◽  
Self Cleaning ◽  
Angle Deposition

Effects of annealing on arrays of Ge nanocolumns formed by glancing angle deposition

2012 ◽  
Vol 258 (24) ◽  
pp. 9762-9769 ◽  
Author(s):  
C. Khare ◽  
J.W. Gerlach ◽  
T. Höche ◽  
B. Fuhrmann ◽  
H.S. Leipner ◽  
...  
Keyword(s):  
Glancing Angle Deposition ◽  
Glancing Angle ◽  
Angle Deposition
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