Ordered Si-Ge nanostructures by glancing angle deposition via ion beam sputtering

2011 ◽  
Vol 1329 ◽  
Author(s):  
Jens Bauer ◽  
Michael Weise ◽  
Chinmay Khare ◽  
Bernd Rauschenbach
Keyword(s):  
Temporal Evolution ◽  
Ion Beam ◽  
Glancing Angle Deposition ◽  
Ion Beam Sputtering ◽  
Substrate Preparation ◽  
Sequential Deposition ◽  
Glancing Angle ◽  
Beam Sputtering ◽  
Distinct Morphology ◽  
Angle Deposition

ABSTRACTGlancing angle deposition (GLAD) was used to deposit ordered arrangements of Si/Ge-nanocolumns applying the ion beam sputter technique. After substrate preparation by electron beam lithography as well as nanosphere lithography the deposition behavior of GLAD nanocolumns in regular arrangements with different symmetries was studied. The nanocolumns exhibited distinct morphology regions which are correlated to their temporal evolution during deposition. Furthermore, the customization of the column morphology by non-uniform substrate rotation is considered. Axial Si/Ge-heterojunctions were incorporated by sequential deposition.

Ion-Beam Assisted Glancing Angle Deposition for Relative Humidity Sensors

2008 ◽  
Vol 8 (9) ◽  
pp. 1521-1522 ◽  
Author(s):  
Michael T. Taschuk ◽  
Jason B. Sorge ◽  
John J. Steele ◽  
Michael J. Brett
Keyword(s):  
Relative Humidity ◽  
Ion Beam ◽  
Glancing Angle Deposition ◽  
Humidity Sensors ◽  
Glancing Angle ◽  
Angle Deposition

scholarly journals Three-dimensional structural comparison of tantalum glancing angle deposition thin films by FIB-SEM

2019 ◽  
Vol 8 (2) ◽  
pp. 305-315
Author(s):  
Tobias Ott ◽  
Diego Roldán ◽  
Claudia Redenbach ◽  
Katja Schladitz ◽  
Michael Godehardt ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Glancing Angle Deposition ◽  
Infrared Sensors ◽  
Geometric Information ◽  
Tantalum Films ◽  
Glancing Angle ◽  
Nano Rods ◽  
Angle Deposition

Abstract. Thin tantalum films generated by glancing angle deposition serve as functional optical layers, for instance as absorption layers for ultrathin infrared sensors. They consist of nano-rods whose dimensions and distribution influence the optical properties of the thin film. Serial sectioning by a focused ion beam combined with scanning electron microscopy of the slices generates stacks of highly resolved images of this nanostructure. Dedicated image processing reconstructs the spatial structure from this stack such that 3-D image analysis yields geometric information that can be related to the optical performance.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

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