Transport properties of InAs nanowire field effect transistors: The effects of surface states

2007 ◽  
Vol 25 (4) ◽  
pp. 1432 ◽  
Author(s):  
Shadi A. Dayeh ◽  
Cesare Soci ◽  
Paul K. L. Yu ◽  
Edward T. Yu ◽  
Deli Wang
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Surface States

Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

2017 ◽  
Vol 5 (6) ◽  
pp. 1409-1413 ◽  
Author(s):  
E. Montes ◽  
U. Schwingenschlögl
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanotubes ◽  
High Transconductance ◽  
Passivated Silicon ◽  
Silicon Nanotube

Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

2000 ◽  
Vol 77 (2) ◽  
pp. 250-252 ◽  
Author(s):  
J. P. Ibbetson ◽  
P. T. Fini ◽  
K. D. Ness ◽  
S. P. DenBaars ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Surface States ◽  
Polarization Effects ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Transport Properties in (Ga,Mn)N Nanowire Field-Effect Transistors

2007 ◽  
Vol 111 (30) ◽  
pp. 11480-11483 ◽  
Author(s):  
Moon-Ho Ham ◽  
Dong-Keun Oh ◽  
Jae-Min Myoung
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors

Influence of Phenyl Perfluorination on Charge Transport Properties of Distyryl-Oligothiophenes in Organic Field-Effect Transistors

2008 ◽  
Vol 113 (4) ◽  
pp. 1567-1574 ◽  
Author(s):  
Christine Videlot-Ackermann ◽  
Hugues Brisset ◽  
Jian Zhang ◽  
Jorg Ackermann ◽  
Sébastien Nénon ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors

2012 ◽  
Vol 7 (1) ◽  
pp. 159 ◽  
Author(s):  
Leonardo Viti ◽  
Miriam S Vitiello ◽  
Daniele Ercolani ◽  
Lucia Sorba ◽  
Alessandro Tredicucci
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Doping Dependence ◽  
Se Doping
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