Impact of the crystal structure ofHfO2on the transport properties of modelHfO2/Si/HfO2silicon-on-insulator field-effect transistors: A combined DFT-scattering theory approach

2009 ◽  
Vol 79 (23) ◽  
Author(s):  
G. Giorgi ◽  
L. R. C. Fonseca ◽  
A. Korkin ◽  
K. Yamashita
2012 ◽  
Vol 23 (5) ◽  
pp. 554-564 ◽  
Author(s):  
Ehren M. Mannebach ◽  
Josef W. Spalenka ◽  
Phillip S. Johnson ◽  
Zhonghou Cai ◽  
F. J. Himpsel ◽  
...  

2017 ◽  
Vol 5 (6) ◽  
pp. 1409-1413 ◽  
Author(s):  
E. Montes ◽  
U. Schwingenschlögl

Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.


2007 ◽  
Vol 111 (30) ◽  
pp. 11480-11483 ◽  
Author(s):  
Moon-Ho Ham ◽  
Dong-Keun Oh ◽  
Jae-Min Myoung

2008 ◽  
Vol 113 (4) ◽  
pp. 1567-1574 ◽  
Author(s):  
Christine Videlot-Ackermann ◽  
Hugues Brisset ◽  
Jian Zhang ◽  
Jorg Ackermann ◽  
Sébastien Nénon ◽  
...  

2012 ◽  
Vol 7 (1) ◽  
pp. 159 ◽  
Author(s):  
Leonardo Viti ◽  
Miriam S Vitiello ◽  
Daniele Ercolani ◽  
Lucia Sorba ◽  
Alessandro Tredicucci

2007 ◽  
Vol 449 (1-3) ◽  
pp. 160-164 ◽  
Author(s):  
Hiroyuki Sugiyama ◽  
Takayuki Nagano ◽  
Ryo Nouchi ◽  
Naoko Kawasaki ◽  
Yohei Ohta ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document