Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

The currents of n-p junctions and polarization effects caused by the capture processes of diffusion Si-receivers (detectors) of radiation exposed by ultrasound have been analyzed in this work. It was found that there are local concentrations of impurity atoms with an effective size l>6μm30μm in Si-n-p radiation receivers. They determine the behavior of the signal amplitude in different intervals of electric and temperature fields. It was found that at Е>1500V/cm and T>168K, the efficiency of collecting nonequilibrium charge carriers significantly increases and doublets of spectral α-lines and “humps” disappear at the temperature dependences of the signal amplitude. The main physical processes and mechanisms that determine the appearance of the phenomenon of "polarization" of Si-n-p-detectors were investigated. This phenomenon is caused by the existence of local gold atoms, which arise in the process of manufacturing technology of Si-n-p-receivers and act as effective trapping centers.

Reducing opinion polarization: Effects of exposure to similar people with differing political views

In a large-scale, preregistered experiment on informal political communication, we algorithmically matched participants, varying two dimensions: 1) the degree of incidental similarity on nonpolitical features; and 2) their stance agreement on a contentious political topic. Matched participants were first shown a computer-generated social media profile of their match highlighting all the shared nonpolitical features; then, they read a short, personal, but argumentative, essay written by their match about the reduction of inequality via redistribution of wealth by the government. We show that support for redistribution increased and polarization decreased for participants with both mild and strong views, regardless of their political leaning. We further show that feeling close to the match is associated with an 86% increase in the probability of assimilation of political views. Our analysis also uncovers an asymmetry: Interacting with someone with opposite views greatly reduced feelings of closeness; however, interacting with someone with consistent views only moderately increased them. By extending previous work about the effects of incidental similarity and shared identity on affect into the domain of political opinion change, our results bear real-world implications for the (re)-design of social media platforms. Because many people prefer to keep politics outside of their social networks, encouraging cross-cutting political communication based on nonpolitical commonalities is a potential solution for fostering consensus on potentially divisive and partisan topics.

Elastic electron scattering with CH2Br2 and CCl2Br2: The role of the polarization effects

We present elastic electron scattering cross sections with holmethane molecules CH2Br2 and CCl2Br2 in the low energy region ranging from 0.01 to 20 eV. The calculations are performed with R-matrix method in static-exchange plus polarization (SEP) and close-coupling (CC) approximations. The integral, differential, and momentum transfer cross sections are calculated. The convergence of the obtained cross sections is checked at four different levels of SEP approximation. The predicted positions of the resonances agree well with available results. The precise resonance parameters are found to be sensitive to the treatment of polarization effects employed. We found that the polarization has a substantial effect on the cross sections, and this effect becomes even more important for lower impact energies.

The Interplay of Interstitial and Substitutional Copper in Zinc Oxide

Cu impurities are reported to have significant effects on the electrical and optical properties of bulk ZnO. In this work, we study the defect properties of Cu in ZnO using hybrid quantum mechanical/molecular mechanical (QM/MM)–embedded cluster calculations based on a multi-region approach that allows us to model defects at the true dilute limit, with polarization effects described in an accurate and consistent manner. We compute the electronic structure, energetics, and geometries of Cu impurities, including substitutional and interstitial configurations, and analyze their effects on the electronic structure. Under ambient conditions, CuZn is the dominant defect in the d9 state and remains electronically passive. We find that, however, as we approach typical vacuum conditions, the interstitial Cu defect becomes significant and can act as an electron trap.