Effect of electrical aging on field emission from carbon nanotube field emitter arrays

AbstractWe have grown well-aligned carbon nanotube arrays by thermal chemical vapor deposition at 800°C on Fe nanoparticles deposited by a pulsed laser on a porous Si substrate. Porous Si substrates were prepared by the electrochemical etching of p-Si(100) wafers with resistivities of 3 to 6 ωcm. These well-aligned carbon nanotube field emitter arrays are suitable for electron emission applications such as cold-cathode flat panel displays and vacuum microelectronic devices like microwave power amplifier tubes. Field emission characterization has been performed on the CNT-cathode diode device at room temperature and in a vacuum chamber below 10−6 Torr. The anode is maintained at a distance of 60[.proportional]m away from the carbon nanotube cathode arrays through an insulating spacer of polyvinyl film. The measured field emitting area is 4.0×10−5cm2. Our carbon nanotube field emitter arrays emit 1mA/cm2at the electric field, 2V/[.proportional]m. And they emit a large current density as high as 80mA/cm2 at 3V/[.proportional]m. The open tip structure of our carbon nanotubes and their good adhesion through Fe nanoparticles to the Si substrate are part of the reason why we can attain a large field emission current density within a low field. The field emitter arrays in our diode device are vertically well-aligned carbon nanotubes on the Si-wafer substrate.

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Optically stimulated picosecond field emission pulses from gated p-silicon field emitter arrays

Applied Physics Letters ◽

10.1063/1.2710475 ◽

2007 ◽

Vol 90 (8) ◽

pp. 083506 ◽

Cited By ~ 14

Author(s):

Chin-Jen Chiang ◽

Kendrick X. Liu ◽

Jonathan P. Heritage

Keyword(s):

Field Emission ◽

Field Emitter ◽

Field Emitter Arrays

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Field-emission characteristics of single- and double-gate all-metallic field emitter arrays fabricated by molding and self-aligned gate process

2009 22nd International Vacuum Nanoelectronics Conference ◽

10.1109/ivnc.2009.5271650 ◽

2009 ◽

Cited By ~ 1

Author(s):

S. Tsujino ◽

E. Kirk ◽

T. Vogel ◽

J. Gobrecht

Keyword(s):

Field Emission ◽

Emission Characteristics ◽

Double Gate ◽

Field Emitter ◽

Field Emitter Arrays

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Efficient Carbon Nanotube Field Emitter using Electrospun Carbon Nanofibers as a Flexible Electrode

MRS Proceedings ◽

10.1557/proc-1173-u06-03 ◽

2009 ◽

Vol 1173 ◽

Author(s):

Hidetoshi Matsumoto ◽

Kenichi Suzuki ◽

Kazuma Tsuboi ◽

Mie Minagawa ◽

Akihiko Tanioka ◽

...

Keyword(s):

Carbon Nanotube ◽

Carbon Fibers ◽

Current Density ◽

Chemical Vapor ◽

Light Sources ◽

Flexible Electrode ◽

Field Emitter ◽

Field Emitter Arrays ◽

Thin Carbon ◽

Cnt Field Emitter

AbstractThermal-stable, conductive, and flexible carbon fabric (CF), which is composed of thin carbon fibers prepared by electrospinning, was used for the substrate of carbon nanotube (CNT) field emitter arrays. The field emitter arrays were prepared by chemical vapor deposition (CVD). The current density-electric field characteristics revealed that the CNT field emitter arrays on CF produced a higher current density at a lower turn-on voltage compared to ones on a Si substrate. This emitter integrated with a gate electrode based on hierarchy-structured carbon materials, CNTs on CF, can be used for light sources, displays, and other electronic devices.

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