Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices

Author(s):  
Michael R. Johnson ◽  
David A. Cullen ◽  
Lu Liu ◽  
Tsung Sheng Kang ◽  
Fan Ren ◽  
...  
2008 ◽  
Vol 47 (7) ◽  
pp. 5330-5332 ◽  
Author(s):  
Satoshi Harui ◽  
Hidetoshi Tamiya ◽  
Takanobu Akagi ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  

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