Electron energy‐loss spectral analysis of diamond and diamond‐like carbon films

1990 ◽  
Vol 8 (3) ◽  
pp. 2226-2230 ◽  
Author(s):  
Yaxin Wang ◽  
R. W. Hoffman ◽  
John C. Angus
1999 ◽  
Vol 593 ◽  
Author(s):  
X. Fan ◽  
E. C. Dickey ◽  
S. J. Pennycook

ABSTRACTMetal-doped diamond-like carbon films were produced for the purpose of an electrochemical nano-electrode. In this study we use Z-contrast scanning transmission electron microscopy to directly observe metal cluster formation and distributions within the chromium-doped carbon films. At low doping (∼6at%Cr), Cr is uniformly distributed; at high doping (∼12at%Cr), Cr-rich clusters are formed. Using electron energy loss spectroscopy, we find that the Cr clusters tend to be metallic-like at low doping levels and carbide-like at high doping levels according to the Cr L2.3 white line ratios. The carbon is more diamond-like at low doping and more graphite/carbide like at high doping according to the sp2/sp3 electron percentage measurements.


Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.


2001 ◽  
Vol 90 (1) ◽  
pp. 39-45 ◽  
Author(s):  
I. Alexandrou ◽  
A.J. Papworth ◽  
B. Rafferty ◽  
G.A.J. Amaratunga ◽  
C.J. Kiely ◽  
...  

1979 ◽  
Vol 61 (2) ◽  
pp. L1-L4 ◽  
Author(s):  
Chr. Weissmantel ◽  
K. Bewilogua ◽  
C. Schürer ◽  
K. Breuer ◽  
H. Zscheile

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