Scanning Auger electron spectroscopy of the fiber/matrix interface of SiC fiber/silicate glass matrix composites

1990 ◽  
Vol 8 (3) ◽  
pp. 2096-2100 ◽  
Author(s):  
Bruce L. Laube ◽  
John J. Brennan
1994 ◽  
Vol 350 ◽  
Author(s):  
J. M. Galbraith ◽  
D. A. Koss ◽  
J. R. Hellmann

AbstractLarge-scale fiber displacement behavior, usually characterized by a “frictional” sliding stress (τslide), has been studied in two sapphire-reinforced TiAl systems. Experimental results from fiber pushout and reverse push-back tests indicate that the large-scale sliding behavior of debonded fibers leads to an average τslide-value which progressively decreases during fiber displacements. Previous studies of SCS-6 (SiC) fiber-reinforced glass and metal matrix composites have attributed decreases in τslide to the fracture and wear of fiber asperities. However, given a matrix in which fiber asperities do not easily wear (e.g., a TiAl alloy), SEM examination of the fiber/matrix interface indicates that matrix plasticity plays a dominant role in the decrease of τslide with fiber displacement. Experimental evidence suggests that the observed decrease in τslide can be attributed to (1) a decrease in fiber roughness perceived by the matrix due to matrix grooving and (2) a relaxation of radial clamping as a result of material removal from the interface.


1998 ◽  
Vol 64 (628) ◽  
pp. 2931-2937
Author(s):  
Tomonaga OKABE ◽  
Nobuo TAKEDA ◽  
Katuhiro IMAI ◽  
Jun KOMOTORI ◽  
Masao SHIMIZU ◽  
...  

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.


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