Comparison between ultraviolet-photoelectron spectroscopy and reflection high-energy electron diffraction intensity oscillations during Si epitaxial growth on Si(100)

1997 ◽  
Vol 15 (3) ◽  
pp. 911-914 ◽  
Author(s):  
Y. Enta ◽  
H. Irimachi ◽  
M. Suemitsu ◽  
N. Miyamoto
Keyword(s):  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
Energy Electron ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
High Energy Electron ◽  
Diffraction Intensity

Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001)

1992 ◽  
Vol 46 (11) ◽  
pp. 6815-6824 ◽  
Author(s):  
T. Shitara ◽  
D. D. Vvedensky ◽  
M. R. Wilby ◽  
J. Zhang ◽  
J. H. Neave ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Epitaxial Growth ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Diffraction Intensity ◽  
Step Density

Morphological model of reflection high‐energy electron‐diffraction intensity oscillations during epitaxial growth on GaAs(001)

1992 ◽  
Vol 60 (12) ◽  
pp. 1504-1506 ◽  
Author(s):  
T. Shitara ◽  
D. D. Vvedensky ◽  
M. R. Wilby ◽  
J. Zhang ◽  
J. H. Neave ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Epitaxial Growth ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Diffraction Intensity ◽  
Morphological Model
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