Morphological model of reflection high‐energy electron‐diffraction intensity oscillations during epitaxial growth on GaAs(001)

Applied Physics Letters ◽

10.1063/1.107285 ◽

1992 ◽

Vol 60 (12) ◽

pp. 1504-1506 ◽

Author(s):

T. Shitara ◽

D. D. Vvedensky ◽

M. R. Wilby ◽

J. Zhang ◽

J. H. Neave ◽

...

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Morphological Model

Download Full-text

Comparison between ultraviolet-photoelectron spectroscopy and reflection high-energy electron diffraction intensity oscillations during Si epitaxial growth on Si(100)

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580731 ◽

1997 ◽

Vol 15 (3) ◽

pp. 911-914 ◽

Author(s):

Y. Enta ◽

H. Irimachi ◽

M. Suemitsu ◽

N. Miyamoto

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Photoelectron Spectroscopy ◽

High Energy ◽

Energy Electron ◽

Ultraviolet Photoelectron Spectroscopy ◽

High Energy Electron ◽

Diffraction Intensity

Download Full-text

Reflection high‐energy electron diffraction intensity oscillations and surface reconstructions measured during epitaxial growth of Si(001) from Si2H6 molecular beams

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.577758 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1846-1855 ◽

Author(s):

S. M. Mokler ◽

W. K. Liu ◽

N. Ohtani ◽

B. A. Joyce

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beams ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Surface Reconstructions

Download Full-text

Dynamics of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)BGaAs substrates

Applied Physics Letters ◽

10.1063/1.102878 ◽

1990 ◽

Vol 56 (25) ◽

pp. 2533-2535 ◽

Author(s):

M. Y. Yen ◽

T. W. Haas

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

Download Full-text

Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001)

Physical Review B ◽

10.1103/physrevb.46.6815 ◽

1992 ◽

Vol 46 (11) ◽

pp. 6815-6824 ◽

Author(s):

T. Shitara ◽

D. D. Vvedensky ◽

M. R. Wilby ◽

J. Zhang ◽

J. H. Neave ◽

...

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Download Full-text

Reflection high‐energy electron diffraction intensity oscillation induced by electric current during Si epitaxial growth on Si (001) 2×1 surfaces

Applied Physics Letters ◽

10.1063/1.102198 ◽

1989 ◽

Vol 55 (17) ◽

pp. 1715-1717 ◽

Author(s):

K. Nishimori ◽

H. Tokutaka ◽

T. Tamon ◽

S. Kishida ◽

N. Ishihara

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Electric Current ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Intensity Oscillation

Download Full-text

Frequency analysis of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on nominally oriented (111)B substrates

Applied Physics Letters ◽

10.1063/1.114029 ◽

1995 ◽

Vol 66 (5) ◽

pp. 610-612 ◽

Author(s):

B. J. Garcia ◽

C. Fontaine ◽

A. Muñoz‐Yagüe

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Frequency Analysis ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

Download Full-text

Observation of reflection high energy electron diffraction intensity oscillations during Si molecular beam epitaxial growth from disilane

Applied Physics Letters ◽

10.1063/1.107046 ◽

1992 ◽

Vol 60 (18) ◽

pp. 2255-2257 ◽

Author(s):

S. M. Mokler ◽

W. K. Liu ◽

N. Ohtani ◽

B. A. Joyce

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

Download Full-text

Quantitative comparison of surface morphology and reflection high-energy electron diffraction intensity for epitaxial growth on GaAs

Surface Science ◽

10.1016/s0039-6028(00)00453-2 ◽

2000 ◽

Vol 458 (1-3) ◽

pp. 247-256 ◽

Author(s):

G.R. Bell ◽

T.S. Jones ◽

J.H. Neave ◽

B.A. Joyce

Keyword(s):

Electron Diffraction ◽

Surface Morphology ◽

Epitaxial Growth ◽

High Energy ◽

Quantitative Comparison ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity

Download Full-text

Reflection high-energy electron diffraction oscillations during epitaxial growth of high-temperature superconducting oxides

Physical Review Letters ◽

10.1103/physrevlett.65.2684 ◽

1990 ◽

Vol 65 (21) ◽

pp. 2684-2687 ◽

Author(s):

T. Terashima ◽

Y. Bando ◽

K. Iijima ◽

K. Yamamoto ◽

K. Hirata ◽

...

Keyword(s):

High Temperature ◽

Electron Diffraction ◽

Epitaxial Growth ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

High Temperature Superconducting ◽

Superconducting Oxides

Download Full-text

Monte Carlo simulation of reentrant reflection high-energy electron diffraction intensity oscillation observed during low-temperature GaAs growth

Applied Physics Letters ◽

10.1063/1.123318 ◽

1999 ◽

Vol 74 (22) ◽

pp. 3275-3277 ◽

Author(s):

Haruyuki Yasuda ◽

Hideo Ohno

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Electron Diffraction ◽

Low Temperature ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Intensity ◽

Intensity Oscillation ◽

Low Temperature Gaas

Download Full-text