Summary Abstract: Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopy

1985 ◽  
Vol 3 (4) ◽  
pp. 1136 ◽  
Author(s):  
R. M. Feenstra
Keyword(s):  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Etched Silicon

Parallel fabrication on chemically etched silicon using scanning tunneling microscopy

1992 ◽  
Vol 42-44 ◽  
pp. 1303-1308 ◽  
Author(s):  
X. Zheng ◽  
J. Hetrick ◽  
S.-T. Yau ◽  
M.H. Nayfeh
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Etched Silicon

Surface morphology of MBE-grown GaAs(001)−(2 × 4) and GaAs(001)-faceted surfaces investigated by scanning tunneling microscopy

1993 ◽  
Vol 287-288 ◽  
pp. 514-519 ◽  
Author(s):  
V. Bressler-Hill ◽  
R. Maboudian ◽  
M. Wassermeier ◽  
X.-S. Wang ◽  
K. Pond ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Stm Observation of Solid Phase Epitaxy Processes of Ar-Sputtered Si(100) Surfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
Katsuhiro Uesugi ◽  
Masamichi Yoshimura ◽  
Takafumi Yao ◽  
Tomoshige Sato ◽  
Takashi Sueyoshi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
Double Layer ◽  
Solid Phase ◽  
The Other ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Solid Phase Epitaxy ◽  
Tunneling Microscopy ◽  
Partially Observed

ABSTRACTScanning tunneling microscopy (STM) is used to investigate the surface morphology of Ar+-ion bombarded Si(100) surfaces and to elucidate the very beginning stages of solid phase epitaxy (SPE) processes of the Ar+-ion bombarded Si surfaces. The Ar+-ion bombarded Si surface consists of hillocks of 1–2 nm in diameter and 0.35–0.75 nm in height. The onset of SPE initiates at around 590°C, at which temperature a (2×2) structure surrounded by amorphous regions is partially observed on terraces of the surface. During annealing at 590–620°C, the areas of the c(2×2) and c(4×4) reconstruction surrounded by amorphous regions develops. New defect models for the (2×2) and c(4×4) structures are proposed w here alternating arrangements of the buckled dimers together with missing dimer defects are considered. On the other hand, after thermal annealing of the Ar+-ion bombarded Si at 830°C for 10 sec, terraces of (2×1) and (1×2) orientations arc observed on the surface, and pyramidal structures on a nanometer-scale which consists of double-layer step edges (dimer rows perpendicular to terrace edge) arc observed.

Stress-induced structures on surfaces observed using Scanning Tunneling Microscopy and low-energy Electron Microscopy

1992 ◽  
Vol 50 (1) ◽  
pp. 332-333
Author(s):  
Ellen D. Williams ◽  
R.J. Phaneuf ◽  
N.C. Bartelt ◽  
W. Swiech ◽  
E. Bauer
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
High Vacuum ◽  
Finite Size ◽  
Low Energy ◽  
Energy Electron ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Low Energy Electron

Elastic stresses play a well-known and important role in the structure of thin films during growth. However, elastic effects can also greatly influence surface morphology of the substrate. One source of this influence, as has long been recognized is the elastic interactions between steps on surfaces. More recently, Marchenko has shown that surface stress can stabilize finite-size structures in surfaces, such as facets. Traditionally surface morphologies such as steps and facets have been measured by low-energy electron diffraction. However, the more recent development of ultra-high vacuum compatible microscopic techniques such as scanning tunneling microscopy, reflection electron microscopy, and low-energy electron microscopy, now make it possible to image steps and facets directly to obtain information about sizes and size distributions. This information in turn makes it possible to test the influence of stress on surface morphology directly.

Stress Evolution in Ultra Thin Sputtered Films

1995 ◽  
Vol 405 ◽  
Author(s):  
Quanmin Su ◽  
R. C. Cammarata ◽  
Manfred Wuttig
Keyword(s):  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
Intrinsic Stress ◽  
Scanning Tunneling ◽  
Characteristic Relaxation Time ◽  
Stress Evolution ◽  
Tunneling Microscopy ◽  
Sputtered Films ◽  
Membrane Technique ◽  
Sputter Deposited

AbstractThe stress and microstructure of growing thin films evolve with time if the deposition is interrupted or terminated. To establish the parameters which control both kinetic processes ultra thin Au, Cu and Al layers were sputter deposited on Si membranes and the stress evolution was monitored by a vibrating membrane technique. The related surface morphology was studied by scanning tunneling microscopy. Aging after each deposition causes stress evolution towards higher tension and the evolution of the stress with time follows an exponential law with a characteristic relaxation time of the order of tens of seconds. This time was found to depend strongly on the accumulated film thickness as well as the surface morphology. The intrinsic stress of the growing layer increases with the coverage of the film on substrate. Scanning Tunneling Microscopy (STM) shows that the film grows in a Volmer-Weber (VW) mode and the stress reaches a maximum as the film become continuous.

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