Tantalum-Titanium Oxynitride Thin Films Deposited by DC Reactive Magnetron Co-Sputtering: Mechanical, Optical, and Electrical Characterization

The possibility to tune the elemental composition and structure of binary Me oxynitride-type compounds (Me1Me2ON) could lead to attractive properties for several applications. For this work, tantalum-titanium oxynitride (TaTiON) thin films were deposited by DC reactive magnetron co-sputtering, with a –50 V bias voltage applied to the substrate holder and a constant substrate temperature of 100 °C. To increase or to decrease in a controlled manner, the Ti and Ta content in the co-sputtered films, the Ti and Ta target currents were varied between 0.00 and 1.00 A, in 0.25 A steps, while keeping the sum of the currents applied to the two targets at 1.00 A. The reactive gases flow, consisting of a nitrogen and oxygen gas mixture with a constant N2/O2 ratio (85%/15%), was also kept constant. The single-metal oxynitrides (TaON and TiON) showed a low degree of crystallinity, while all the other co-sputtered films revealed themselves to be essentially amorphous. These two films also exhibited higher adhesion to the metallic substrate. The TaON film showed the highest hardness value (14.8 GPa) and the TiON film a much lower one (8.8 GPa), while the co-sputtered coatings exhibited intermediary values. One of the most interesting findings was the significant increase in the O content when the Ti concentration surpassed the Ta one. This significantly influenced the optical characteristic of the films, but also their electrical properties. The sheet resistivity of the co-sputtered films is strongly dependent on the O/(Ta + Ti) atomic ratio.

Deposition, Morphological, and Mechanical Evaluation of W and Be-Al2O3 and Er2O3 Co-Sputtered Films in Comparison with Pure Oxides

Compact and defect-free high melting point oxide strengthened metallic matrix configurations are promising to resolve the hydrogen permeation and brittleness issues relevant to the fusion research community. Previous studies on oxide addition to metallic matrix demonstrated a mitigation in brittleness behavior, while deposition techniques and material configurations are still to be investigated. Thus, here, we report the structural, morphological, and mechanical characterization of metal-oxides thin layers co-deposited by radio frequency (RF)and direct current (DC) magnetron sputtering. A total of six configurations were deposited such as single thin layers of oxides (Al2O3, Er2O3) and co-deposition configurations as metal-oxides (W, Be)—(Al2O3, Er2O3). The study of films roughness by atomic force microscopy (AFM) method show that for Al2O3 metallic-oxides is increased to an extent that could favor gaseous trapping, while co-depositions with Be seem to promote an increased roughness and defects formation probability compared to W co-depositions. Lower elastic modulus on metal-oxide co-depositions was observed, while the indentation hardness increased for Be and decreased for W matrix configurations. These outputs are highly relevant for choosing the proper compact and trap-free configuration that could be categorized as a permeation barrier for hydrogen and furtherly studied in laborious permeation yield campaigns.

Stabilizing Tin Anodes in Sodium-Ion Batteries by Alloying with Silicon

Group(IV) of the periodic table is a promising column with respect to high capacity anode materials for sodium-ion batteries (SIBs). Unlike carbon that relies on interlayer defects, pores, and intercalation to store sodium, its heavier cousins, silicon, germanium, and tin, form binary alloys with sodium. Alloying does lead to the formation of high capacity compounds but they are, however, susceptible to large volumetric changes upon expansion that results in pulverization of the electrodes and poor cycling stability. Silicon and tin are particularly intriguing due to their high theoretical reversible capacities of 954 mAh/g (NaSi) and 847 mAh/g (Na15Sn4), respectively, but suffer from poor practical capacity and very short lifetimes, respectively. In order to buffer the detrimental effects of volume expansion and contraction, nanoscale multilayer anodes comprising silicon and tin films were prepared and compared with uniform films composed of atomically mixed silicon and tin, as well as elemental silicon and tin films. The results reveal that the high capacity fade for elemental Sn is associated with detrimental anodic (desodiation) reactions at a high cutoff voltage with a threshold defined as ~0.8 VNa. Binary mixtures of Si and Sn were tested in a number of different architectures, including multilayer films and co-sputtered films with varying volume ratios of both elements. All mixed films showed improved capacity retention compared to the performance of anodes comprising only elemental Sn. A multilayer structure composed of 3 nm-thick silicon and tin layers showed the highest Coulombic efficiency and retained 97% of its initial capacity after 100 cycles, which is vastly improved compared to 7% retention observed for the elemental Sn film. The role of the Si interlayers appears to be one of acting as a buffer during cycling to help preserve Sn particles within the thin Sn interlayers. The alloying element, Si, plays two roles - it stabilizes grain growth/pulverization and also alters the surface chemistry of the anodes, thus affecting the formation of solid electrolyte interphase (SEI).