Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors
1987 ◽
Vol 5
(3)
◽
pp. 785
◽
1991 ◽
Vol 6
(2)
◽
pp. 103-107
◽
1989 ◽
Vol 36
(6)
◽
pp. 1036-1044
◽
1990 ◽
Vol 37
(1)
◽
pp. 67-78
◽
1985 ◽
Vol 32
(12)
◽
pp. 2787-2796
◽
1988 ◽
Vol 35
(12)
◽
pp. 2295-2301
◽