Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors

Author(s):  
H. T. Griem
1982 ◽  
Vol 40 (6) ◽  
pp. 530-532 ◽  
Author(s):  
M. Laviron ◽  
D. Delagebeaudeuf ◽  
P. Delescluse ◽  
P. Etienne ◽  
J. Chaplart ◽  
...  

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