Molecular beam epitaxial growth and characterization of pseudomorphic modulation-doped field effect transistors

Thin Solid Films ◽

10.1016/0040-6090(91)90373-6 ◽

1991 ◽

Vol 196 (2) ◽

pp. 295-303 ◽

Author(s):

J. Zhang ◽

N.C. Tien ◽

E.W. Lin ◽

H.H. Wieder ◽

W.H. Ku ◽

...

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes

Journal of Applied Physics ◽

10.1063/1.347140 ◽

1990 ◽

Vol 68 (1) ◽

pp. 347-350 ◽

Author(s):

J. Pamulapati ◽

R. Lai ◽

G. I. Ng ◽

Y. C. Chen ◽

P. R. Berger ◽

...

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Performance Characteristics ◽

Molecular Beam Epitaxial ◽

Growth Modes ◽

Molecular Beam Epitaxial Growth

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Molecular-beam epitaxial growth and characterization of modulation-doped field-effect transistor heterostructures using InAs/GaAs superlattice channels

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586807 ◽

1993 ◽

Vol 11 (3) ◽

pp. 601 ◽

Author(s):

M. V. Baeta Moreira

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Molecular Beam Epitaxial ◽

Effect Transistor ◽

Molecular Beam Epitaxial Growth

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Lattice‐mismatched In0.53Ga0.47As/In0.52Al0.48As modulation‐doped field‐effect transistors on GaAs: Molecular‐beam epitaxial growth and device performance

Journal of Applied Physics ◽

10.1063/1.345368 ◽

1990 ◽

Vol 67 (7) ◽

pp. 3323-3327 ◽

Author(s):

Kevin Chang ◽

Pallab Bhattacharya ◽

Richard Lai

Keyword(s):

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Device Performance ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of InAs/GaSb double quantum wells for complementary heterojunction field-effect transistors

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90571-d ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 29-35 ◽

Author(s):

Kanji Yoh ◽

Kazumasa Kiyomi ◽

Mitsuaki Yano ◽

Masataka Inoue

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Double Quantum ◽

Molecular Beam Epitaxial ◽

Heterojunction Field Effect Transistors ◽

Molecular Beam Epitaxial Growth

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Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583751 ◽

1987 ◽

Vol 5 (3) ◽

pp. 785 ◽

Author(s):

H. T. Griem

Keyword(s):

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Electron Gas ◽

Dimensional Electron ◽

Gas Field ◽

Molecular Beam Epitaxial ◽

Dimensional Electron Gas ◽

Molecular Beam Epitaxial Growth

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Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained‐layer single quantum wells and superlattices on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.352005 ◽

1992 ◽

Vol 72 (11) ◽

pp. 5233-5239 ◽

Author(s):

Shizuo Fujita ◽

Yi‐hong Wu ◽

Yoichi Kawakami ◽

Shigeo Fujita

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Single Quantum ◽

Strained Layer ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Comparative study on the molecular beam epitaxial growth and characterization of AlGaN nanowire structures on AlN buffer layer and on Si

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/6.0000646 ◽

2020 ◽

Vol 38 (6) ◽

pp. 062804

Author(s):

Jiaying Lu ◽

Yun Zhong ◽

Songrui Zhao

Keyword(s):

Comparative Study ◽

Epitaxial Growth ◽

Buffer Layer ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and optical characterization of AlGaN nanowires with reduced substrate temperature

AIP Advances ◽

10.1063/1.5140572 ◽

2020 ◽

Vol 10 (2) ◽

pp. 025022 ◽

Author(s):

Y. Zhong ◽

E. Berikaa ◽

J. Lu ◽

X. Yin ◽

S. Zhao

Keyword(s):

Substrate Temperature ◽

Epitaxial Growth ◽

Molecular Beam ◽

Optical Characterization ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and characterization of CoAl on AlAs/GaAs

Applied Physics Letters ◽

10.1063/1.105756 ◽

1991 ◽

Vol 59 (24) ◽

pp. 3115-3117 ◽

Author(s):

M. Tanaka ◽

H. Sakakibara ◽

T. Nishinaga

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular-beam epitaxial growth and characterization of GaAs on epitaxial CoSi2 films on Si(111)

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584397 ◽

1988 ◽

Vol 6 (2) ◽

pp. 703 ◽

Author(s):

N. Chand

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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