Studies of nucleation and growth morphology of boron-doped diamond microcrystals by scanning tunneling microscopy

We report temperature-dependent electrical resistivity (or dc conductivity, σdc) down to 4 K for pristine and gamma-irradiated microwave plasma-assisted chemical vapor-deposited boron-doped diamond films with [B]/[C]gas = 4000 ppm to gain insights into the nature of conduction mechanism, distribution, and kinetics of point defects generated due to gamma irradiation prompted by the article [Gupta et al., J. Mater. Res.24, 1498 (2009)]. The pristine samples exhibit typical metallic conduction up to 50 K and with reduction in temperature to 25 K, the σdc decreases monotonically followed by saturation at 4 K, suggesting “disordered” metal or “localized” behavior. For irradiated films, continuous increasing resistivity with decreasing temperature demonstrates semiconducting behavior with thermal activation/hopping conduction phenomena. It is intriguing to propose that irradiation leads to substantial hydrogen redistribution leading to unexpected low-temperature resistivity behavior. Scanning tunneling microscopy/spectroscopy helped to illustrate local grain and grain boundary effects.

Download Full-text

Scanning tunneling microscopy and spectroscopy studies of superconducting boron-doped diamond films

Science and Technology of Advanced Materials ◽

10.1016/j.stam.2006.05.008 ◽

2006 ◽

Vol 7 (sup1) ◽

pp. S22-S26 ◽

Cited By ~ 13

Author(s):

Terukazu Nishizaki ◽

Yoshihiko Takano ◽

Masanori Nagao ◽

Tomohiro Takenouchi ◽

Hiroshi Kawarada ◽

...

Keyword(s):

Scanning Tunneling Microscopy ◽

Diamond Films ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Boron Doped Diamond ◽

Boron Doped ◽

Spectroscopy Studies

Download Full-text

Computer simulation of the formation of three-dimensional image of the pyrolytic graphite surface by scanning tunneling microscopy using a boron-doped diamond tip

Journal of Superhard Materials ◽

10.3103/s1063457611030075 ◽

2011 ◽

Vol 33 (3) ◽

pp. 186-192 ◽

Cited By ~ 4

Author(s):

M. A. Tsysar’

Keyword(s):

Computer Simulation ◽

Scanning Tunneling Microscopy ◽

Pyrolytic Graphite ◽

Three Dimensional ◽

Graphite Surface ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Boron Doped Diamond ◽

Dimensional Image ◽

Boron Doped

Download Full-text

STM Study of Diamond(001) Surface

MRS Proceedings ◽

10.1557/proc-242-115 ◽

1992 ◽

Vol 242 ◽

Author(s):

Takashi Tsuno ◽

Takahiro Imai ◽

Yoshiki Nishibayashi ◽

Naoji Fujimori

Keyword(s):

Methane Concentration ◽

Chemical Vapor ◽

Epitaxial Films ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Boron Doped Diamond ◽

Boron Doped ◽

Partially Observed ◽

Type Reconstruction ◽

B Doping

ABSTRACTUndoped and boron-doped diamond epitaxial films were deposited on diamond(001) substrate by micro-wave plasma assisted chemical vapor deposition and their surfaces were studied by scanning tunneling microscopy in air. An atomic order resolution was confirmed for the observation.For the undoped epitaxial films, which showed 2×1 and 1×2 RHEED patterns, dimer type reconstruction was observed and it was considered that the growth occurs through the dimer row extension. In the case of B-doped films, the dimer reconstruction was also observed. However, 2×2 structure due to the absence of dimer was partially observed.The effect of boron concentration and methane concentration during epitaxial growth on the surface morphology were also studied. The morphology observed by STM became flatter, as the concentration of B-doping and methane concentration, during growth, increased.

Download Full-text