Topology of synthetic, boron-doped diamond by scanning tunneling microscopy

1994 ◽  
Vol 3 (1-2) ◽  
pp. 94-97 ◽  
Author(s):  
Shenda M. Baker ◽  
George R. Rossman ◽  
John D. Baldeschwieler
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped

scholarly journals Intrinsic granularity in nanocrystalline boron-doped diamond films measured by scanning tunneling microscopy

2009 ◽  
Vol 80 (22) ◽  
Author(s):  
B. L. Willems ◽  
V. H. Dao- ◽  
J. Vanacken ◽  
L. F. Chibotaru ◽  
V. V. Moshchalkov ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Diamond Films ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped

Investigating point defects in irradiated boron-doped diamond films by temperature-dependent electrical properties and scanning tunneling microscopy and spectroscopy

2010 ◽  
Vol 25 (3) ◽  
pp. 444-457 ◽  
Author(s):  
Sanju Gupta ◽  
John Farmer ◽  
Dario Daghero ◽  
Renato Gonnelli
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Point Defects ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Dependent ◽  
Boron Doped Diamond ◽  
Boron Doped

We report temperature-dependent electrical resistivity (or dc conductivity, σdc) down to 4 K for pristine and gamma-irradiated microwave plasma-assisted chemical vapor-deposited boron-doped diamond films with [B]/[C]gas = 4000 ppm to gain insights into the nature of conduction mechanism, distribution, and kinetics of point defects generated due to gamma irradiation prompted by the article [Gupta et al., J. Mater. Res.24, 1498 (2009)]. The pristine samples exhibit typical metallic conduction up to 50 K and with reduction in temperature to 25 K, the σdc decreases monotonically followed by saturation at 4 K, suggesting “disordered” metal or “localized” behavior. For irradiated films, continuous increasing resistivity with decreasing temperature demonstrates semiconducting behavior with thermal activation/hopping conduction phenomena. It is intriguing to propose that irradiation leads to substantial hydrogen redistribution leading to unexpected low-temperature resistivity behavior. Scanning tunneling microscopy/spectroscopy helped to illustrate local grain and grain boundary effects.

scholarly journals Scanning tunneling microscopy and spectroscopy studies of superconducting boron-doped diamond films

2006 ◽  
Vol 7 (sup1) ◽  
pp. S22-S26 ◽  
Author(s):  
Terukazu Nishizaki ◽  
Yoshihiko Takano ◽  
Masanori Nagao ◽  
Tomohiro Takenouchi ◽  
Hiroshi Kawarada ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Diamond Films ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Spectroscopy Studies

STM Study of Diamond(001) Surface

1992 ◽  
Vol 242 ◽  
Author(s):  
Takashi Tsuno ◽  
Takahiro Imai ◽  
Yoshiki Nishibayashi ◽  
Naoji Fujimori
Keyword(s):  
Methane Concentration ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Partially Observed ◽  
Type Reconstruction ◽  
B Doping

ABSTRACTUndoped and boron-doped diamond epitaxial films were deposited on diamond(001) substrate by micro-wave plasma assisted chemical vapor deposition and their surfaces were studied by scanning tunneling microscopy in air. An atomic order resolution was confirmed for the observation.For the undoped epitaxial films, which showed 2×1 and 1×2 RHEED patterns, dimer type reconstruction was observed and it was considered that the growth occurs through the dimer row extension. In the case of B-doped films, the dimer reconstruction was also observed. However, 2×2 structure due to the absence of dimer was partially observed.The effect of boron concentration and methane concentration during epitaxial growth on the surface morphology were also studied. The morphology observed by STM became flatter, as the concentration of B-doping and methane concentration, during growth, increased.

Scanning Probe Microscopy with Diamond Tip in Tribo-nanolithography

2011 ◽  
Vol 1318 ◽  
Author(s):  
Oleg Lysenko ◽  
Vladimir Grushko ◽  
Evgeni Mitskevich ◽  
Athanasios Mamalis
Keyword(s):  
Scanning Probe Microscopy ◽  
Experimental Studies ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped Diamond ◽  
High Stiffness ◽  
Boron Doped ◽  
Afm Cantilever ◽  
The Stability

ABSTRACTThe results obtained by direct nano-patterning demonstrate the potential of the SPM-based techniques that include surface scratching to create 3D nanostructures. Such techniques became known as tribo-nanolithography and have prospects of being successfully implemented in the future nanofabrication industry. An important obstacle to this, however, is the effect of wear at the nanometer scale which is critical to the stability of tribo-nanolithoraphic processes. Such stability is achievable via in-depth theoretical and experimental studies of friction at the nanoscale along with the development of pioneering equipment. Our work presents the results of experimental fabrication of nanostructures formed by nanoscratching with the use of the multifunctional scanning tunneling microscopy previously developed by the authors. The authors attempted scratching the silicon surface by using a boron-doped diamond tip. This operation was undertaken in the same direction sequentially with the tip sliding a side of the groove by one of the tip’s facets and the consequent surface scanning. Although not being applicable to non-conductive surfaces, the proposed technique has significant advantages. One advantage is related to the high stiffness of the tunneling probe as compared to the stiffness of the AFM cantilever. High stiffness and perpendicularity of the tip to the surface during surface processing eliminates bending beam effects on the typical AFM and ensures machining effectiveness. Purposely synthesized boron-doped single-crystal diamonds were used as a tip material. The results of experimental fabrication of nanostructures formed by nanoscratching with the use of the multifunctional scanning probe are demonstrated and discussed.

UHV STM of Cesium on Oxygenated Epitaxial Diamond (100) Films

1998 ◽  
Vol 509 ◽  
Author(s):  
R.E. Stallcup ◽  
J.M. Perez
Keyword(s):  
Chemical Vapor Deposition ◽  
Scanning Tunneling Microscopy ◽  
Vapor Deposition ◽  
Synthetic Diamond ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped ◽  
Theoretical Predictions

AbstractThe effects of Cs on oxygenated epitaxial diamond (100) films are studied using ultrahigh vacuum (UHV) scanning tunneling microscopy (STM). The epitaxial diamond (100) films are grown on synthetic diamond substrates using chemical vapor deposition and are boron doped. Before Cs deposition and oxygenation, UHV STM imaging of the epitaxial (100) films reveals a (2×l) dimer reconstruction. After Cs deposition and oxygenation, steps with relatively smooth surfaces are observed using positive tip voltages. Using negative tip voltages, many round bright structures approximately 20 Å in diameter are observed on the surface. We propose that these bright structures are Cs atoms or clusters of Cs atoms. Since these structures are only observed for negative tip voltages, they have a large number of empty states. Our observations are compared with recent theoretical predictions for Cs adsorbed on oxygenated diamond (100).

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