Kinetic roughening of Si surfaces and surfactant effect in low temperature molecular beam epitaxy growth

ABSTRACTC-doped GaAs films were prepared by novely a developed, combined ion beam and molecular beam method (CIBMBE) as a function of hyperthermal (30–500 eV) energies (EC+) of carbon ion (C+) beam. Ion beams of a fixed beam current density were impinged during molecular beam epitaxy growth of GaAs at substrate temperature of 550 °C. Low temperature (2 K) photoluminescence (PL) has been used to characterize the samples together with Hall effects measurements at room temperature. Through the spectral evolution of an emission denoted by [g-g]β which is a specific emission relevant to acceptor-acceptor pairs, the activation rate was confirmed to increase with increasing EC+ for EC+ lower than 170 eV. It was explicitly demonstrated that the most effective Ec+ to establish highest activation rate is located at ~170 eV. This growing activation rate was suggested to be attributed to the enhanced migration of both impinged C and host constituent atoms with increasing EC+. This surmise was supported also by Hall effect measurements which revealed the maximum net hole concentration ( |NA-ND| ) for EC+=170 eV. For EC+ higher than ~170 eV, increasing EC+ was found to induce the reduction of activation rate. It was suggested that this observation is ascribed not to the formation of C donors but to the enhanced sputtering effect of impinged C+ ions with increasing EC+.

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Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

High Power Laser and Particle Beams ◽

10.3788/hplpb20132506.1523 ◽

2013 ◽

Vol 25 (6) ◽

pp. 1523-1526

Author(s):

万文坚 Wan Wenjian ◽

尹嵘 Yin Rong ◽

韩英军 Han Yingjun ◽

王丰 Wang Feng ◽

郭旭光 Guo Xuguang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Molecular Beam Epitaxy Growth ◽

Multiple Quantum

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Low temperature solid-source molecular-beam epitaxy growth of Al-free quantum well laser diodes using a GaP-decomposition source

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590740 ◽

1999 ◽

Vol 17 (3) ◽

pp. 1281 ◽

Cited By ~ 9

Author(s):

P. A. Postigo ◽

G. Lullo ◽

K. H. Choy ◽

C. G. Fonstad

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Well ◽

Molecular Beam ◽

Laser Diodes ◽

Molecular Beam Epitaxy Growth ◽

Quantum Well Laser

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Molecular beam epitaxy growth of Sr1-xKxFe2As2 and Ba1-xKxFe2As2

MRS Proceedings ◽

10.1557/opl.2012.1317 ◽

2012 ◽

Vol 1434 ◽

Cited By ~ 1

Author(s):

Michio Naito ◽

Shinya Ueda ◽

Soichiro Takeda ◽

Shiro Takano ◽

Akihiro Mitsuda

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Systematic Study ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Mbe Growth ◽

Temperature Growth ◽

Crucial Problem ◽

Crystalline Films ◽

High Volatility

ABSTRACTSingle-crystalline films of superconducting Sr1-xKxFe2As and Ba1-xKxFe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350 ºC) in reduced As flux. We performed a systematic study of the doping dependence of Tc in Ba1-xKxFe2As2 for x = 0.0 to 1.0. The highest Tcon (Tcend) so far attained for Ba1-xKxFe2As2 is 38.3 K (35.5 K) at x ~ 0.3.

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