Low temperature photoluminescence from GaAs impinged by mass-separated low-energy C+ ion beams during molecular beam epitaxy

1993 ◽  
Vol 316 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Stefan Winter ◽  
Shinji Kimura ◽  
Yushin Tsai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Ion Beams ◽  
Beam Current Density ◽  
Molecular Beam Epitaxy Growth ◽  
Spectral Evolution ◽  
Activation Rate

ABSTRACTC-doped GaAs films were prepared by novely a developed, combined ion beam and molecular beam method (CIBMBE) as a function of hyperthermal (30–500 eV) energies (EC+) of carbon ion (C+) beam. Ion beams of a fixed beam current density were impinged during molecular beam epitaxy growth of GaAs at substrate temperature of 550 °C. Low temperature (2 K) photoluminescence (PL) has been used to characterize the samples together with Hall effects measurements at room temperature. Through the spectral evolution of an emission denoted by [g-g]β which is a specific emission relevant to acceptor-acceptor pairs, the activation rate was confirmed to increase with increasing EC+ for EC+ lower than 170 eV. It was explicitly demonstrated that the most effective Ec+ to establish highest activation rate is located at ~170 eV. This growing activation rate was suggested to be attributed to the enhanced migration of both impinged C and host constituent atoms with increasing EC+. This surmise was supported also by Hall effect measurements which revealed the maximum net hole concentration ( |NA-ND| ) for EC+=170 eV. For EC+ higher than ~170 eV, increasing EC+ was found to induce the reduction of activation rate. It was suggested that this observation is ascribed not to the formation of C donors but to the enhanced sputtering effect of impinged C+ ions with increasing EC+.

Effects of Carbon-Ion Irradiation-Energies on the Molecular Beam Epitaxy of GaAs and Ingaas

1995 ◽  
Vol 388 ◽  
Author(s):  
Y. Makita ◽  
T. Iida ◽  
T. Shima ◽  
S. Kimura ◽  
A. Obara ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Current Density ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Hole Concentration ◽  
Ion Beam ◽  
High Energy ◽  
Beam Current Density ◽  
Carbon Ion ◽  
Activation Rate

AbstractCarbon ion (C+) irradiation during molecular beam epitaxy (MBE) growth of GaAs/GaAs and in0.53.Ga0.47As/InP layers was carried out using CIBMBE (combined ion beam and molecular beam epitaxy) method as a function of wide acceleration energy (Ea=30 eV-30 keV) at a constant ion beam current density. Judging from the monitored current density and the net hole concentration (INA-ND|) obtained from Hall effect measurements, activation rate as high as 88% was achieved for as-grown GaAs layers by C+ ion irradiation of Ea=~170eV. It was revealed that by annealing at 800°C, a slight enhancement (~ 10%) of INA-ND| is practiced for Ea <~ 130eV but a significant increase of INA-ND| is realized for Ea>~lkeV. IN in0.53Ga0.47As/InP layers with increasing Ea, a type conversion of electric conduction from n to p was found to occur at Ea= ~70~100eV. these observations describe that Ea plays a vital role to determine the location of incorporated electrical and optical active impurities in GaAs and inGaAs. Further for comparison, C+-implanted GaAs layers were prepared by high-energy (400 keV) ion-implantation as a function of substrate temperature (T1=RT-600 °C). For C dose concentration of lxl018cm-3\ the highest activation rate of ~20 % was obtained at T1=~150 °C. This result states that CIBMBE method is a superior doping method in view of activation rate of introduced dopants and the formation of damage-free ion-irradiated layers.

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorods

2011 ◽  
Vol 323 (1) ◽  
pp. 323-325 ◽  
Author(s):  
H. Tambo ◽  
S. Hasegawa ◽  
H. Kameoka ◽  
Y.K. Zhou ◽  
S. Emura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum

Molecular beam epitaxy growth of Sr1-xKxFe2As2 and Ba1-xKxFe2As2

2012 ◽  
Vol 1434 ◽  
Author(s):  
Michio Naito ◽  
Shinya Ueda ◽  
Soichiro Takeda ◽  
Shiro Takano ◽  
Akihiro Mitsuda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Systematic Study ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Mbe Growth ◽  
Temperature Growth ◽  
Crucial Problem ◽  
Crystalline Films ◽  
High Volatility

ABSTRACTSingle-crystalline films of superconducting Sr1-xKxFe2As and Ba1-xKxFe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350 ºC) in reduced As flux. We performed a systematic study of the doping dependence of Tc in Ba1-xKxFe2As2 for x = 0.0 to 1.0. The highest Tcon (Tcend) so far attained for Ba1-xKxFe2As2 is 38.3 K (35.5 K) at x ~ 0.3.

Low temperature molecular beam epitaxy growth of cubic GaCrN

2008 ◽  
Vol 310 (1) ◽  
pp. 40-46 ◽  
Author(s):  
S. Kimura ◽  
S. Emura ◽  
Y. Yamauchi ◽  
Y.K. Zhou ◽  
S. Hasegawa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

Damage-Free Ion Beam Doping of Carbon During Molecular Beam Epitaxy of GaAs

1993 ◽  
Vol 316 ◽  
Author(s):  
Yunosuke Makita ◽  
Tsutomu Iida ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Energy Shift ◽  
Beam Current ◽  
High Energy ◽  
Carbon Doping ◽  
High Mass ◽  
Impurity Effects

ABSTRACTRecently, we introduced various acceptor impurities into MBE-grown ultra-pure GaAs by conventional high-energy ion implantation and found many novel shallow emissions associated with acceptor-acceptor pairs. Most of these emissions were easily quenched by extremely small amount of residual donor atoms which were unintentionally introduced during doping processes. For the interpretation of impurity effects, the usage of mass-separated atom as dopant source was strongly suggested. Along this consideration, we developed combined ion beam and molecular beam epitaxy (CIBMBE) technology, in which damage-free doping with high mass purity (M/ΔM=100) is expected to be possible. We here present the results of low-energy (100 eV) carbon ion doping using CIBMBE method. Samples were prepared asa function of growth temperature (Tg=400-700°C) and ion beam current. Net hole concentration, |NA-ND| as high as ~1×1020 cm-3 was obtained in as-grown samples. In 2K photoluminescence spectra, emissions due to acceptor-acceptor pairs exhibit specific energy shift with growing |NA-ND|. Results indicate that carbon doping can be made efficiently even at Tg as low as 500°C without any post heat treatment. These results also tell that by CIBMBE method no serious radiation damages are produced and the undesired impurity contamination can be considerably suppressed.

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