Molecular beam epitaxy growth of Sr1-xKxFe2As2 and Ba1-xKxFe2As2
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ABSTRACTSingle-crystalline films of superconducting Sr1-xKxFe2As and Ba1-xKxFe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350 ºC) in reduced As flux. We performed a systematic study of the doping dependence of Tc in Ba1-xKxFe2As2 for x = 0.0 to 1.0. The highest Tcon (Tcend) so far attained for Ba1-xKxFe2As2 is 38.3 K (35.5 K) at x ~ 0.3.
2011 ◽
Vol 323
(1)
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pp. 323-325
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2013 ◽
Vol 25
(6)
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pp. 1523-1526
1997 ◽
Vol 36
(Part 2, No. 6A)
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pp. L703-L704
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1999 ◽
Vol 17
(3)
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pp. 1281
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