Solid-state time-gated luminescence microscope with ultraviolet light-emitting diode excitation and electron-multiplying charge-coupled device detection

2008 ◽  
Vol 13 (3) ◽  
pp. 034022 ◽  
Author(s):  
Russell Connally ◽  
James Piper
Keyword(s):  
Solid State ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Charge Coupled Device ◽  
Light Emitting ◽  
State Time

Broadband near-infrared BaMSi3O9:Cr3+ (M = Zr, Sn, Hf) phosphors for light-emitting diode applications

2021 ◽  
Author(s):  
Yan Zhang ◽  
Yanjie Liang ◽  
Shihai Miao ◽  
Dongxun Chen ◽  
Shao Yan ◽  
...  
Keyword(s):  
Solid State ◽  
Solid State Reaction ◽  
Near Infrared ◽  
Light Emitting Diode ◽  
Solid State Reaction Method ◽  
Luminescence Properties ◽  
Light Emitting ◽  
Reaction Method ◽  
Simple Solid State Reaction

A series of Cr3+-doped BaMSi3O9 (M = Zr, Sn, Hf) near-infrared emitting phosphors with tunable luminescence properties have been successfully synthesized by using a simple solid-state reaction method. The developed...

scholarly journals AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode

2008 ◽  
Vol 45 (4) ◽  
pp. 25-32 ◽  
Author(s):  
L. Dimitrocenko ◽  
J. Grube ◽  
P. Kulis ◽  
G. Marcins ◽  
B. Polyakov ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Electron Tunneling ◽  
Light Emitting Diode ◽  
Vapour Phase ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Near Ultraviolet ◽  
Metal Organic ◽  
Organic Vapour

AlGaN-InGaN-GaN Near Ultraviolet Light Emitting DiodeA 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and AlxGa1-xN monocrystalline layers with a surface roughness of < 1 nm required for making light emitting devices has been carried out. To enhance the LED emission efficiency, a modified symmetric composition of an active single quantum well (SQW) structure was proposed. In addition to the conventional p-doped AlGaN:Mg electron overflow blocking barrier, ann-doped AlGaN:Si SQW barrier layer in the structure was formed that was meant to act as an additional electron tunneling barrier.

Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction

2013 ◽  
Vol 370 ◽  
pp. 314-318 ◽  
Author(s):  
Byung Oh Jung ◽  
Yong Hun Kwon ◽  
Dong Ju Seo ◽  
Dong Seon Lee ◽  
Hyung Koun Cho
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Zno Nanowire ◽  
Light Emitting

Simple, Accurate Solid-State Diode Photometer for Use in Measuring Oxygen Saturation of Whole Blood

1974 ◽  
Vol 20 (9) ◽  
pp. 1135-1137 ◽  
Author(s):  
R Fesler ◽  
Th Clerbaux
Keyword(s):  
Solid State ◽  
Oxygen Saturation ◽  
Light Source ◽  
Whole Blood ◽  
Continuous Measurement ◽  
Light Emitting Diode ◽  
Detector Response ◽  
Typical Application ◽  
Light Emitting ◽  
Absorption Characteristics

Abstract A small, easily-built photometer is described, in which a solid-state light-emitting diode is used as the light source and a phototransistor as the detector. The detector response is kept constant by modulating the diode intensity in proportion to the absorption characteristics of the sample being analyzed. Linearity and stability are good, even with turbid solutions (drift is &lt;0.001 absorbance unit per hour). A typical application of this photometer is the continuous measurement of the percentage of oxyhemoglobin (0 to 100 %) in blood. For hemoglobin concentrations from 3 to 18 g/dl, the relation between oxyhemoglobin as estimated with this diode photometer and by a galvanic method (LEX-O2-CON) was: SO2LED = 0.993 SO2 % LEX + 0.69;r = 0.9975; n = 129; Syx = 1.59.

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