KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
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2008 ◽
Vol 202
(22-23)
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pp. 5476-5479
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2011 ◽
Vol 40
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pp. 377-381
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Vol 33
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pp. 032402
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Vol 49
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pp. 040206
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2012 ◽
Vol 51
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pp. 01AG04
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