Deposition of silicon carbide thin films by pulsed excimer laser ablation technique in the 25-700°C deposition temperature range

1995 ◽  
Author(s):  
My A. El Khakani ◽  
E. Gat ◽  
Yves Beaudoin ◽  
Mohamed Chaker ◽  
C. Monteil ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Deposition Temperature ◽  
Excimer Laser Ablation ◽  
Ablation Technique ◽  
Temperature Range ◽  
Laser Ablation Technique

Si1−xGex thin films deposited by the pulsed excimer laser ablation technique

1995 ◽  
Vol 86 (1-4) ◽  
pp. 175-179 ◽  
Author(s):  
F. Antoni ◽  
E. Fogarassy ◽  
C. Fuchs ◽  
B. Prévot ◽  
J.P. Stoquert
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Ablation Technique ◽  
Laser Ablation Technique

Deposition of Tungsten Films by Pulsed Excimer Laser Ablation Technique

1993 ◽  
Vol 334 ◽  
Author(s):  
A.M. Dhote ◽  
S.B. Ogale
Keyword(s):  
Laser Ablation ◽  
Substrate Temperature ◽  
Excimer Laser ◽  
Film Growth ◽  
Excimer Laser Ablation ◽  
Ablation Technique ◽  
Temperature Range ◽  
M Phase ◽  
Influence Of Substrate ◽  
Laser Ablation Technique

AbstractLow temperature deposition of W on Semiconductor substrates is vital for microelectronics technology. Laser ablation technique using KrF (248 nm) excimer laser has been employed to deposit W films from W(CO)6. The substrates used are Si(100) and SiO2. The influence of substrate temperature on the film growth rate was investigated in a broad temperature range (20 - 500 °C), keeping the laser fluence fixed at 0.4 Jcm−2. The substrate temperature is found to have a strong influence on the resistivity of the deposited films. Film resistivities within a factor of 3 of the value for pure bulk W have been observed in the substrate temperature range of 300 - 500 °C. X-ray diffraction data were also obtained. These revealed that the crystal structure of the film deposited in this temperature range corresponds specifically to the m-phase. Optical emissions from the plasma generated during the pulsed excimer laser ablation of W(CO)6 are also examined by an optical Multichannel Analyser (OMA).

Tailored Thin Films of Superconducting Bi-Sr-Ca-Cu Oxide Prepared by Excimer Laser Ablation Technique

1989 ◽  
Vol 28 (Part 2, No. 5) ◽  
pp. L823-L826 ◽  
Author(s):  
Hitoshi Tabata ◽  
Tomoji Kawai ◽  
Masaki Kanai ◽  
Osamu Murata ◽  
Shichio Kawai
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Ablation Technique ◽  
Laser Ablation Technique

Epitaxial growth of RbTiOPO4films on KTiOPO4substrates by excimer laser ablation technique

1994 ◽  
Vol 76 (12) ◽  
pp. 8215-8217 ◽  
Author(s):  
Z. G. Liu ◽  
J. M. Liu ◽  
N. B. Ming ◽  
J. Y. Wang ◽  
Y. G. Liu ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Epitaxial Growth ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Ablation Technique ◽  
Laser Ablation Technique
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