Experimental studies of growth kinetics of silicon by remote plasma-enhanced chemical vapor deposition at low temperatures

1990 ◽  
Author(s):  
Brian G. Anthony ◽  
Ting-Chen Hsu ◽  
Louis H. Breaux ◽  
Rong Z. Qian ◽  
Sanjay K. Banerjee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Experimental Studies ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Kinetics Of

scholarly journals Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Analysis ◽  
Deposition Parameters ◽  
Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

Reaction Kinetics of Epitaxial Silicon Deposition at 220-400°C Using Remote Plasma-Enhanced Chemical Vapor Deposition

1989 ◽  
Vol 165 ◽  
Author(s):  
B. Anthony ◽  
T. Hsu ◽  
L. Breaux ◽  
S. Banerjee ◽  
A. Tasch
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Reaction Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Silicon ◽  
Remote Plasma ◽  
Inert Carrier ◽  
Substrate Temperatures ◽  
Kinetics Of

AbstractIn this paper the reaction kinetics of Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) are investigated. Growth rate characterization has been performed for substrate temperatures of 220 – 400°C, r-f powers from 4 – 8 W, and silane flow rates of 10 – 30 sccm. Growth rate has been found to increase exponentially with r-f power, which is, as yet, unexplained. An approximate square root dependence of growth rate on silane partial pressure agrees with the theory of Claasen et. Al for Chemical Vapor Deposition (CVD) of silicon from silane with an inert carrier gas. From an Arrhenius plot of the temperature dependence of growth rate, we note a change of slope at ∼300°C which we have attributed to the behavior of hydrogen at the silicon surface.

Systematic investigation of the growth kinetics of β-Ga2O3 epilayer by plasma enhanced chemical vapor deposition

2020 ◽  
Vol 116 (7) ◽  
pp. 072102 ◽  
Author(s):  
C. Wu ◽  
D. Y. Guo ◽  
L. Y. Zhang ◽  
P. G. Li ◽  
F. B. Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Systematic Investigation ◽  
Kinetics Of
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