Laser irradiation effects on thin aluminum plates subjected to surface flow

2016 ◽  
Author(s):  
Houman Jiang ◽  
Guomin Zhao ◽  
Minsun Chen ◽  
Xin Peng
2013 ◽  
Author(s):  
Houman Jiang ◽  
Guomin Zhao ◽  
Minsun Chen ◽  
Luguang Jiao ◽  
Junshen Li

1994 ◽  
Vol 33 (Part 1, No. 8) ◽  
pp. 4764-4768 ◽  
Author(s):  
Yuji Hamada ◽  
Shunichi Kawanishi ◽  
Masanobu Nishii ◽  
Shun'ichi Sugimoto ◽  
Tadashi Yamamoto

2012 ◽  
Vol 112 (6) ◽  
pp. 063520 ◽  
Author(s):  
E. Zielony ◽  
E. Płaczek-Popko ◽  
A. Henrykowski ◽  
Z. Gumienny ◽  
P. Kamyczek ◽  
...  

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.


1980 ◽  
Vol 46 (3-4) ◽  
pp. 133-139 ◽  
Author(s):  
G. Della Mea ◽  
L. Donà Dalle Rose ◽  
P. Mazzoldi ◽  
A. Miotello

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-529-C6-530
Author(s):  
C. M. Falco ◽  
I. K. Schuller

2003 ◽  
Author(s):  
Timon C. Liu ◽  
Chang-Chun Zeng ◽  
Jian-Ling Jiao ◽  
Song-Hao Liu

Author(s):  
E. Agostinelli ◽  
C. Caliendo ◽  
D. Fiorani ◽  
S. Foglia ◽  
A. M. Testa ◽  
...  

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