Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Download Full-text

Effects of Laser Annealing on the Furnace Annealed Amorphous Silicon Thin Films

MRS Proceedings ◽

10.1557/proc-420-317 ◽

1996 ◽

Vol 420 ◽

Author(s):

Kwon-Young Choi ◽

Jae-Hong Jeon ◽

Min-Koo Han ◽

Yong-Sang Kim

Keyword(s):

Thin Film ◽

Low Temperature ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Furnace Annealing ◽

Average Grain Size ◽

Polysilicon Films ◽

Temperature Furnace

AbstractThe performance of polysilicon thin film transistors fabricated by two-step annealing, which consists of furnace annealing and subsequent excimer laser annealing, is described. It was found that the average grain size of low temperature furnace annealed polysilicon films was several times larger than that of excimer laser annealed polysilicon films while the density of in-grain defect in low temperature furnace annealed films was much higher than that of excimer laser annealed film. The device characteristics of the low temperature furnace annealed polysilicon thin film transistors were improved significantly by postannealing, such as high temperature furnace annealing and excimer laser annealing, due to the effective elimination of in-grain defects. The density of trap states, which was extracted from the transfer curves of polysilicon thin film transistors, was used to demonstrate the effects of modifying the deep and tail trap levels by two-step annealing.

Download Full-text

Pulsed Laser Annealing of Aluminum

MRS Proceedings ◽

10.1557/proc-1-567 ◽

1980 ◽

Vol 1 ◽

Cited By ~ 1

Author(s):

W. R. Wampler ◽

D. M. Follstaedt ◽

P. S. Peercy

Keyword(s):

Single Crystal ◽

Laser Irradiation ◽

Reasonable Agreement ◽

Ruby Laser ◽

Laser Annealing ◽

Ion Beam ◽

Pulsed Laser ◽

Nucleation Time ◽

Pulsed Laser Annealing ◽

Beam Analysis

ABSTRACTPulsed ruby laser irradiation of unimplanted single crystal and implanted polycrystalline Al has been studied with ion beam analysis and TEM. The results show that Al is melted to a depth of ∼ 0.9 μm with a 4.2 J/cm2 , 15 nsec pulse, and that vacancies are quenched into Al during resolidification. Diffusion of Zn in liquid Al is observed, and a melt time of ∼ 65 nsec is estimated for a 3.8 J/cm2, 30 nsec pulse. The observations are in reasonable agreement with calculations of sample temperature and melt times. We observe no precipitation of AlSb in liquid Al for Sbimplanted Al, and conclude that the nucleation time satisfies 50 nsec ≲ tnuc ≲ 200 nsec. We find no evidence for amorphous Al after irradiation of single crystal Al with energies ≳ 1.5 J/cm2.

Download Full-text

DLTS Study of Pulsed Ruby Laser Irradiation Effects on n-CdTe

Japanese Journal of Applied Physics ◽

10.1143/jjap.24.l329 ◽

1985 ◽

Vol 24 (Part 2, No. 5) ◽

pp. L329-L331 ◽

Cited By ~ 5

Author(s):

Masahiko Tomitori ◽

Makoto Kuriki ◽

Sugio Ishii ◽

Shigeru Fuyuki ◽

Sohachiro Hayakawa

Keyword(s):

Laser Irradiation ◽

Ruby Laser ◽

Irradiation Effects

Download Full-text

Ablation dynamics of Co/ZnS targets under double pulse femtosecond laser irradiation

Physical Chemistry Chemical Physics ◽

10.1039/c5cp05290d ◽

2016 ◽

Vol 18 (5) ◽

pp. 3522-3529 ◽

Cited By ~ 7

Author(s):

Ignacio Lopez-Quintas ◽

Vincent Loriot ◽

David Ávila ◽

Jesus G. Izquierdo ◽

Esther Rebollar ◽

...

Keyword(s):

Laser Pulse ◽

Femtosecond Laser ◽

Laser Irradiation ◽

Ultrafast Laser ◽

Double Pulse ◽

Femtosecond Laser Irradiation ◽

Pulse Irradiation ◽

Highly Sensitive ◽

Ultrafast Laser Pulse

The ablation dynamics of Co/ZnS is highly sensitive to the details of an ultrafast laser pulse irradiation sequence.

Download Full-text

Channeling Contrast Microscopy: A Powerful Tool for Examining Semiconductor Structures

MRS Proceedings ◽

10.1557/proc-69-305 ◽

1986 ◽

Vol 69 ◽

Cited By ~ 2

Author(s):

J. C. McCallum ◽

R. A. Brown ◽

E. Nygren ◽

J. S. Williams ◽

G. L. Olson

Keyword(s):

Crystal Growth ◽

Laser Annealing ◽

Furnace Annealing ◽

3 Dimensional ◽

Semiconductor Structures ◽

Contrast Microscopy ◽

Lower Temperature ◽

Lateral Variations ◽

Impurity Profiles ◽

Temperature Furnace

AbstractChanneling contrast microscopy with a He+ microbeam has been employed to measure 3-dimensional damage distributions and impurity profiles in ion implanted laser annealed silicon. Refinements to the technique are described, involving construction of a precision goniometer to allow accurate orientation of the microbeam with respect to micron-scale- sample features. We have found that indium diffusion in amorphous silicon is significantly less for laser annealing than with lower temperature furnace annealing. Lateral variations in the extent of crystal growth have also been observed across laser irradiated areas less than 100μm.

Download Full-text