Electronic structure and optical properties of native point defects on Si-doped GaN (0001) surface

Author(s):  
Ying Ju ◽  
Lei Liu ◽  
Feifei Lu
2000 ◽  
Vol 5 (S1) ◽  
pp. 287-293
Author(s):  
J. A. Chisholm ◽  
P. D. Bristowe

We report on the interaction of native point defects with commonly observed planar defects in GaN. Using a pair potential model we find a positive binding energy for all native defects to the three boundary structures investigated indicating a preference for native defects to form in these interfaces. The binding energy is highest for the Ga interstitial and lowest for vacancies. Interstitials, which are not thought to occur in significant concentrations in bulk GaN, should form in the (11 0) IDB and the (10 0) SMB and consequently alter the electronic structure of these boundaries.


2019 ◽  
Vol 40 (8) ◽  
pp. 979-986
Author(s):  
屈艺谱 QU Yi-pu ◽  
陈 雪 CHEN Xue ◽  
王 芳 WANG Fang ◽  
刘玉怀 LIU Yu-huai

2014 ◽  
Vol 156 (1) ◽  
pp. 79-85 ◽  
Author(s):  
Teeraphat Watcharatharapong ◽  
Jiraroj T-Thienprasert ◽  
Sukit Limpijumnong

2013 ◽  
Vol 87 (16) ◽  
Author(s):  
Zhufeng Hou ◽  
Xianlong Wang ◽  
Takashi Ikeda ◽  
Kiyoyuki Terakura ◽  
Masaharu Oshima ◽  
...  

2019 ◽  
Vol 12 (9) ◽  
pp. 091001 ◽  
Author(s):  
Takuma Kobayashi ◽  
Tomoya Gake ◽  
Yu Kumagai ◽  
Fumiyasu Oba ◽  
Yu-ichiro Matsushita

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