Laser writing of color centers in silicon carbide

Author(s):  
S. Castelletto ◽  
T. Katkus ◽  
S. Juodkazis
Nano Letters ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 2377-2383 ◽  
Author(s):  
Yu-Chen Chen ◽  
Patrick S. Salter ◽  
Matthias Niethammer ◽  
Matthias Widmann ◽  
Florian Kaiser ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 72
Author(s):  
Stefania Castelletto ◽  
Jovan Maksimovic ◽  
Tomas Katkus ◽  
Takeshi Ohshima ◽  
Brett C. Johnson ◽  
...  

Color centers in silicon carbide are relevant for applications in quantum technologies as they can produce single photon sources or can be used as spin qubits and in quantum sensing applications. Here, we have applied femtosecond laser writing in silicon carbide and gallium nitride to generate vacancy-related color centers, giving rise to photoluminescence from the visible to the infrared. Using a 515 nm wavelength 230 fs pulsed laser, we produce large arrays of silicon vacancy defects in silicon carbide with a high localization within the confocal diffraction limit of 500 nm and with minimal material damage. The number of color centers formed exhibited power-law scaling with the laser fabrication energy indicating that the color centers are created by photoinduced ionization. This work highlights the simplicity and flexibility of laser fabrication of color center arrays in relevant materials for quantum applications.


2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.


2020 ◽  
Vol 6 (34) ◽  
pp. eaaz2743
Author(s):  
Vishnu Nair ◽  
Jaeseok Yi ◽  
Dieter Isheim ◽  
Menahem Rotenberg ◽  
Lingyuan Meng ◽  
...  

Conducting or semiconducting materials embedded in insulating polymeric substrates can be useful in biointerface applications; however, attainment of this composite configuration by direct chemical processes is challenging. Laser-assisted synthesis has evolved as a fast and inexpensive technique to prepare various materials, but its utility in the construction of biophysical tools or biomedical devices is less explored. Here, we use laser writing to convert portions of polydimethylsiloxane (PDMS) into nitrogen-doped cubic silicon carbide (3C-SiC). The dense 3C-SiC surface layer is connected to the PDMS matrix via a spongy graphite layer, facilitating electrochemical and photoelectrochemical activity. We demonstrate the fabrication of arbitrary two-dimensional (2D) SiC-based patterns in PDMS and freestanding 3D constructs. To establish the functionality of the laser-produced composite, we apply it as flexible electrodes for pacing isolated hearts and as photoelectrodes for local peroxide delivery to smooth muscle sheets.


2020 ◽  
Vol 2 (2) ◽  
pp. 022001 ◽  
Author(s):  
Stefania Castelletto ◽  
Alberto Boretti

Author(s):  
Chuting Wang ◽  
Evan Miyazono ◽  
Ioana Craiciu ◽  
Jake Rochman ◽  
Jonathan Kindem ◽  
...  

2018 ◽  
Vol 43 (24) ◽  
pp. 6077 ◽  
Author(s):  
S. Castelletto ◽  
A. F. M. Almutairi ◽  
K. Kumagai ◽  
T. Katkus ◽  
Y. Hayasaki ◽  
...  

2014 ◽  
Vol 112 (18) ◽  
Author(s):  
Abram L. Falk ◽  
Paul V. Klimov ◽  
Bob B. Buckley ◽  
Viktor Ivády ◽  
Igor A. Abrikosov ◽  
...  

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