Feasibility of nondestructive measurement of photocarrier transport properties in semiconductors with polarization technique

In the present study, two different PVA-PEO nanocomposite blend polymer electrolyte systems viz., System-I: [(PVA)(42.5):(PEO)(42.5):(AgNO3)(5):(PEG)(10):(Al2O3)(x)] and System-II: [(PVA)(47):(PEO)(47):(LiCF3SO3)(9):(EC)(6):(Al2O3)(x)] are prepared using solution cast technique for various Al2O3 nanofiller amounts ranging from 2 to 10 wt%. The influence of Al2O3 concentration on the transport properties of the electrolytes of both these systems is closely inspected. Here, the ionic transport number (ti) measurements of the blend specimens are carried out using ‘dc Polarization Technique’.

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Spectroscopic Diagnostics of Tokamaks

International Astronomical Union Colloquium ◽

10.1017/s0252921100107638 ◽

1988 ◽

Vol 102 ◽

pp. 165-174

Author(s):

C. de Michelis

Keyword(s):

Transport Properties ◽

Power Losses ◽

Spectroscopic Diagnostics ◽

Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

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Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088816 ◽

1991 ◽

Vol 49 ◽

pp. 900-901 ◽

Cited By ~ 1

Author(s):

Alain Claverie ◽

Zuzanna Liliental-Weber

Keyword(s):

Transport Properties ◽

Layer Thickness ◽

Growth Temperature ◽

Low Temperatures ◽

Lattice Parameter ◽

Crystalline Quality ◽

Insulating Properties ◽

Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

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