Dark current improvement by an in-situ plasma treatment on type-II superlattice LWIR photodetectors

2021 ◽  
Author(s):  
Ko Ku Kang ◽  
Seong Min Ryu ◽  
Tae Hee Lee ◽  
Jong Gi Kim ◽  
Jang Ahreum ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Dark Current ◽  
Type Ii ◽  
Type Ii Superlattice

scholarly journals Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 68
Author(s):  
Arash Dehzangi ◽  
Donghai Wu ◽  
Ryan McClintock ◽  
Jiakai Li ◽  
Alexander Jaud ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Efficiency ◽  
Current Density ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Dark Current Density ◽  
Applied Bias ◽  
Type Ii Superlattice ◽  
Specific Detectivity

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W.

Dark current modeling of MWIR type-II superlattice detectors

2012 ◽  
Author(s):  
J. Wróbel ◽  
P. Martyniuk ◽  
E. Plis ◽  
P. Madejczyk ◽  
W. Gawron ◽  
...  
Keyword(s):  
Dark Current ◽  
Type Ii ◽  
Type Ii Superlattice

Low dark current in mid-infrared type-II superlattice heterojunction photodiodes

2017 ◽  
Vol 85 ◽  
pp. 378-381 ◽  
Author(s):  
Johannes Schmidt ◽  
Frank Rutz ◽  
Andreas Wörl ◽  
Volker Daumer ◽  
Robert Rehm
Keyword(s):  
Dark Current ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Superlattice

InAs/GaSb Type II superlattice barrier devices with a low dark current and a high-quantum efficiency

2014 ◽  
Author(s):  
P. C. Klipstein ◽  
E. Avnon ◽  
Y. Benny ◽  
R. Fraenkel ◽  
A. Glozman ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Dark Current ◽  
Type Ii ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Type Ii Superlattice

scholarly journals 1 /f  Noise and Dark Current Correlation in Midwave InAs/GaSb Type‐II Superlattice IR Detectors

2020 ◽  
pp. 2000557
Author(s):  
David Ramos ◽  
Marie Delmas ◽  
Ruslan Ivanov ◽  
Linda Höglund ◽  
Eric Costard ◽  
...  
Keyword(s):  
Dark Current ◽  
Type Ii ◽  
Ir Detectors ◽  
Type Ii Superlattice ◽  
Current Correlation

scholarly journals Novel approach to passivation of InAs/GaSb type II superlattice photodetectors

2019 ◽  
Vol 125 (12) ◽  
Author(s):  
E. Papis-Polakowska ◽  
J. Kaniewski ◽  
A. Jasik ◽  
K. Czuba ◽  
I. Sankowska ◽  
...  
Keyword(s):  
Dark Current ◽  
Self Assembled Monolayers ◽  
Type Ii ◽  
Force Microscopy ◽  
Type Ii Superlattice ◽  
Atomic Force ◽  
Novel Approach ◽  
Assembled Monolayers ◽  
Order Of Magnitude ◽  
Contact Angle Analysis

Abstract The innovative two-step passivation by octadecanethiol (ODT) self-assembled monolayers (SAMs) and the following silicon dioxide (SiO2) deposition was used for the type-II InAs/GaSb superlattice photodetector. To understand the mechanism of passivation, the (100) GaSb surface covered with the ODT and, for comparison, with the biphenyl thiol (BPT), was characterized by the atomic force microscopy, Raman spectroscopy and contact angle analysis. The results of the study indicated the presence of the homogeneous both the ODT and the BPT monolayers; however, the ODT SAMs were more stable. Therefore, the ODT-based wet treatment was used in the two-step passivation resulting in a reduction of the dark current by one order of magnitude for passivated detector compared with an unpassivated device.

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