scholarly journals Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 68
Author(s):  
Arash Dehzangi ◽  
Donghai Wu ◽  
Ryan McClintock ◽  
Jiakai Li ◽  
Alexander Jaud ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Efficiency ◽  
Current Density ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Dark Current Density ◽  
Applied Bias ◽  
Type Ii Superlattice ◽  
Specific Detectivity

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W.

Large Area Visible Blind 4H-SiC p+/N UV Photodiode Obtained by Aluminium Implantation

2016 ◽  
Vol 858 ◽  
pp. 1019-1022
Author(s):  
Antonella Sciuto ◽  
Massimo Mazzillo ◽  
Salvatore di Franco ◽  
Fabrizio Roccaforte
Keyword(s):  
Ion Implantation ◽  
Quantum Efficiency ◽  
Current Density ◽  
Dark Current ◽  
Optically Active ◽  
Dark Current Density ◽  
Large Area ◽  
Recombination Centers ◽  
Emission Microscopy ◽  
Visible Blind

4H-SiC junction photodiodes, obtained by aluminium (Al) ion- implantation on low doped n-type epilayers are widely characterized observing an extremely low dark current density < 1 nA/cm2 at -100 V up to 90°C, a peak responsivity of 0.11 A/W at 280 nm corresponding to a quantum efficiency of 50% and a visible blindness > 103. The absence of optically active defects and pairs recombination centers was monitored by electro-optical and Emission Microscopy measurements.

Semiconductor Photodetectors

2020 ◽  
pp. 527-584
Author(s):  
Vurgaftman Igor
Keyword(s):  
Current Density ◽  
Dark Current ◽  
High Speed ◽  
Resonant Cavity ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Dark Current Density ◽  
Quantum Well Infrared Photodetectors ◽  
Photovoltaic Detectors ◽  
Lower Responsivity

This chapter describes the operating principles of photoconductive and photovoltaic detectors based on III–V semiconductors. The electrical characteristics of both photodiodes and majority carrier barrier structures are discussed starting with the diffusion equation. The chapter outlines the figures of merit used to evaluate the performance of infrared photodetectors including the responsivity, dark current density, and normalized detectivity. It discusses bulk-like and type II superlattice photodetectors and how the multistage arrangement of interband cascade detectors (ICDs) can reduce the dark current density at the expense of a lower responsivity. Detectors that employ intersubband optical transitions, namely, quantum-well infrared photodetectors and quantum cascade detectors, are also discussed. The chapter considers how the dark-current density can be suppressed in resonant-cavity and thin waveguide-based detectors. It concludes with a discussion of the requirements for high-speed operation and an overview of novel types of detectors that draw their inspiration from III–V semiconductor devices.

scholarly journals Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 76
Author(s):  
U. Zavala-Moran ◽  
M. Bouschet ◽  
J. Perez ◽  
R. Alchaar ◽  
S. Bernhardt ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
Spectral Response ◽  
Minority Carrier Lifetime ◽  
Peak Position ◽  
Type Ii ◽  
Dark Current Density ◽  
Time Resolved ◽  
Midwave Infrared ◽  
Electrical Characterizations

In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime value equal to 1 µs at 80 K, carried out on dedicated structure showing photoluminescence peak position at 4.9 µm, is extracted from a time resolved photoluminescence measurement. Dark current density as low as 3.2 × 10−5 A/cm2 at 150 K is reported on the corresponding device exhibiting a 50% cut-off wavelength around 5 µm. A performance analysis through normalized spectral response and dark current density-voltage characteristics was performed to determine both the operating bias and the different dark current regimes.

Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation

2020 ◽  
Vol 116 (22) ◽  
pp. 221103 ◽  
Author(s):  
Arash Dehzangi ◽  
Donghai Wu ◽  
Ryan McClintock ◽  
Jiakai Li ◽  
Manijeh Razeghi
Keyword(s):  
Ion Implantation ◽  
Zinc Ion ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Type Ii Superlattice

InAs/GaSb Type II superlattice barrier devices with a low dark current and a high-quantum efficiency

2014 ◽  
Author(s):  
P. C. Klipstein ◽  
E. Avnon ◽  
Y. Benny ◽  
R. Fraenkel ◽  
A. Glozman ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Dark Current ◽  
Type Ii ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Type Ii Superlattice

scholarly journals Low dark current InAs/GaSb type-II superlattice infrared photodetectors with resonant tunnelling filters

2006 ◽  
Vol 39 (23) ◽  
pp. 4997-5001 ◽  
Author(s):  
Z M Zhu ◽  
P Bhattacharya ◽  
E Plis ◽  
X H Su ◽  
S Krishna
Keyword(s):  
Dark Current ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Resonant Tunnelling ◽  
Type Ii Superlattice

Dark current improvement by an in-situ plasma treatment on type-II superlattice LWIR photodetectors

2021 ◽  
Author(s):  
Ko Ku Kang ◽  
Seong Min Ryu ◽  
Tae Hee Lee ◽  
Jong Gi Kim ◽  
Jang Ahreum ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Dark Current ◽  
Type Ii ◽  
Type Ii Superlattice
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