Gas cluster ion bombardment of GaAs: XPS depth profiles and molecular dynamics modelling

2021 ◽  
Author(s):  
Helen Oppong-Mensah ◽  
Mark A. Baker ◽  
Tim S. Nunney ◽  
Richard G. White ◽  
Jonathon England ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Ion Bombardment ◽  
Depth Profiles ◽  
Cluster Ion ◽  
Dynamics Modelling

CLUSTER ION BOMBARDMENT-INDUCED SURFACE DAMAGE OF Si

1996 ◽  
Vol 03 (01) ◽  
pp. 1045-1049 ◽  
Author(s):  
C.E. ASCHERON ◽  
M. AKIZUKI ◽  
J. MATSUO ◽  
Z. INSEPOV ◽  
G.H. TAKAOKA ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Ion Bombardment ◽  
Surface Damage ◽  
Ion Beams ◽  
Near Surface ◽  
Smooth Interface ◽  
Interaction Processes ◽  
Cluster Ion ◽  
Dynamics Simulations ◽  
Cluster Beams

Surface damage of single-crystalline Si caused by irradiation with Ar-ion cluster beams of different energies has been studied in comparison with that caused by Ar-monomer ion beams. The defected layers have been characterized by RBS channeling, XTEM, and ellipsometry. The experimental results are interpreted on the basis of TRIM and molecular dynamics simulations of the interaction processes with the target. It is found that cluster irradiation damages only a very thin near-surface layer which has a smooth interface to the undamaged substrate. Cluster-ion bombardment forms an oxide layer on the surface by the activation of adsorbed O atoms and substrate atoms.

Real-Space X-Ray Pair Distribution Function Analysis and Molecular-Dynamics Modelling of Diflunisal Channel Hydrates

2020 ◽  
Author(s):  
Anuradha Pallipurath ◽  
Francesco Civati ◽  
Jonathan Skelton ◽  
Dean Keeble ◽  
Clare Crowley ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Distribution Function ◽  
Structural Dynamics ◽  
First Principles ◽  
Pair Distribution Function ◽  
Function Analysis ◽  
Real Space ◽  
X Ray ◽  
Dynamics Modelling ◽  
Dynamics Simulations

X-ray pair distribution function analysis is used with first-principles molecular dynamics simulations to study the co-operative H<sub>2</sub>O binding, structural dynamics and host-guest interactions in the channel hydrate of diflunisal.

Molecular dynamics modelling of EGCG clusters on ceramide bilayers

2015 ◽  
Author(s):  
Jingjie Yeo ◽  
Yuan Cheng ◽  
Weifeng Li ◽  
Yong-Wei Zhang
Keyword(s):  
Molecular Dynamics ◽  
Dynamics Modelling

Molecular-dynamics model of energetic fluorocarbon-ion bombardment on SiO2 I. Basic model and CF2+-ion etch characterization

2005 ◽  
Vol 97 (9) ◽  
pp. 093302 ◽  
Author(s):  
V. V. Smirnov ◽  
A. V. Stengach ◽  
K. G. Gaynullin ◽  
V. A. Pavlovsky ◽  
S. Rauf ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Ion Bombardment ◽  
Dynamics Model ◽  
Basic Model

Surface and Near-Surface Atom Dynamics During Low Energy Xe Ion Bombardment of Si and Fcc Surfaces

1990 ◽  
Vol 193 ◽  
Author(s):  
M. V. R. Murty ◽  
H. S. Lee ◽  
Harry A. Atwater
Keyword(s):  
Molecular Dynamics ◽  
Surface Layer ◽  
Ion Bombardment ◽  
Low Energy ◽  
Surface Processes ◽  
Defect Production ◽  
Near Surface ◽  
Qualitative Nature ◽  
Dynamics Simulations ◽  
Atom Dynamics

ABSTRACTSurface and near-surface processes have been studied during low energy Xe ion bombardment of Si (001) and fcc surfaces using molecular dynamics simulations. Defect production is enhanced near the surface of smooth Si (001) surfaces with respect to the bulk in the energy range 20–150 eV, but is not confined exclusively to the surface layer. The extent and qualitative nature of bombardment-induced dissociation of small fcc islands on an otherwise smooth fcc (001) surface is found to depend strongly on island cohesive energy.

Low Energy Ar Ion Bombardment of (001) Si: Defects and Surface Morphology

1991 ◽  
Vol 223 ◽  
Author(s):  
M. V. R. Murty ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Molecular Dynamics ◽  
Surface Morphology ◽  
Surface Defect ◽  
Formation Rate ◽  
Ion Bombardment ◽  
Low Energy ◽  
Dynamics Simulation ◽  
Defect Structures ◽  
Adatom Diffusion ◽  
Migration Component

ABSTRACTThe interaction of low energy Ar+ ions with several surface defect structures on (001) Si has been investigated using molecular dynamics simulation. The simulations suggest that ions with energy less than 20 eV selectively displace surface atoms without causing bulk damage, and that the displacement energies for different defect structures is different. The most important effect of ion bombardment on surface morphology is the increased formation rate of single adatoms, which may lead to smoother surfaces by enhanced coarsening at typical epitaxial temperatures. Simulations results also imply that the migration component of adatom diffusion is not significantly enhanced by ion bombardment at typical epitaxial temperatures (600 – 800 K).

Sign in / Sign up

Export Citation Format

Share Document