Peculiarities of solid-phase silicon surface laser-induced damage in vacuum and in various gases

2002 ◽  
Author(s):  
Alexander F. Banishev ◽  
Vladimir S. Golubev ◽  
Alexei Y. Kremnev
2020 ◽  
Vol 28 (20) ◽  
pp. 29239
Author(s):  
Yasunori Tanaka ◽  
Ryota Murai ◽  
Yoshinori Takahashi ◽  
Tsuyoshi Sugita ◽  
Daisetsu Toh ◽  
...  

1999 ◽  
Author(s):  
Alexander F. Banishev ◽  
Vladimir S. Golubev ◽  
Alexei Y. Kremnev
Keyword(s):  

2015 ◽  
Author(s):  
Stavros G. Demos ◽  
Raluca A. Negres ◽  
Rajesh N. Raman ◽  
Michael D. Feit ◽  
Kenneth R. Manes ◽  
...  

1994 ◽  
Vol 374 ◽  
Author(s):  
Stephen P McGeoch ◽  
Alan Christie ◽  
Gurmit S Bahra ◽  
Kevin R Welford

AbstractThere is a recognised requirement for solid-phase, non-linear absorbing devices. We present data for a range of non-linear absorbing dyes in polymer hosts. We identify polycarbonate as a useful host material. We recognise that progress will be required to increase the laser-induced damage threshold of the dyed polymers if practical devices are to be realised.


1998 ◽  
Author(s):  
Vitali E. Gruzdev ◽  
Mikhail N. Libenson ◽  
George A. Martsinovsky ◽  
Michael A. Paesler ◽  
M. J. Soileau ◽  
...  

2007 ◽  
Vol 52 (12) ◽  
pp. 1586-1591 ◽  
Author(s):  
A. S. Voronchikhin ◽  
M. V. Gomoyunova ◽  
D. E. Malygin ◽  
I. I. Pronin

1993 ◽  
Vol 317 ◽  
Author(s):  
Olof C. Hellman

ABSTRACTWe study the crystallization of a thin film of amorphous Ge deposited at room temperature on Si (111). Features of the silicon surface buried beneath the Ge film are shown to affect the rate of crystallization. In particular, solid phase epitaxy is observed to be enhanced at surface steps and defects in the surface reconstruction. It is further shown that one-dimensional crystallization patterns can be caused by impurity-Mediated crystallization. Precipitates of an impurity rich phase migrate in the plane of the film, leaving behind a crystalline trail. The Migration path of these precipitates is also dependent on the buried surface structure.


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