AbstractThere is a recognised requirement for solid-phase, non-linear absorbing devices. We present data for a range of non-linear absorbing dyes in polymer hosts. We identify polycarbonate as a useful host material. We recognise that progress will be required to increase the laser-induced damage threshold of the dyed polymers if practical devices are to be realised.
ABSTRACTWe study the crystallization of a thin film of amorphous Ge deposited at room temperature on Si (111). Features of the silicon surface buried beneath the Ge film are shown to affect the rate of crystallization. In particular, solid phase epitaxy is observed to be enhanced at surface steps and defects in the surface reconstruction. It is further shown that one-dimensional crystallization patterns can be caused by impurity-Mediated crystallization. Precipitates of an impurity rich phase migrate in the plane of the film, leaving behind a crystalline trail. The Migration path of these precipitates is also dependent on the buried surface structure.
High surface laser-induced damage threshold of SrB4O7 single crystals under 266-nm (DUV) laser irradiation