Effect of Buried Surface Structure on Solid Phase Epitaxy of GE on SI (111)-7×7

1993 ◽  
Vol 317 ◽  
Author(s):  
Olof C. Hellman
Keyword(s):  
Thin Film ◽  
Surface Structure ◽  
Surface Reconstruction ◽  
Silicon Surface ◽  
Room Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Rich Phase ◽  
One Dimensional ◽  
Surface Steps

ABSTRACTWe study the crystallization of a thin film of amorphous Ge deposited at room temperature on Si (111). Features of the silicon surface buried beneath the Ge film are shown to affect the rate of crystallization. In particular, solid phase epitaxy is observed to be enhanced at surface steps and defects in the surface reconstruction. It is further shown that one-dimensional crystallization patterns can be caused by impurity-Mediated crystallization. Precipitates of an impurity rich phase migrate in the plane of the film, leaving behind a crystalline trail. The Migration path of these precipitates is also dependent on the buried surface structure.

Polycrystalline Si Films Fabricated by Low Temperature Selective Nucleation and Solid Phase Epitaxy Process

1997 ◽  
Vol 485 ◽  
Author(s):  
Claudine M. Chen ◽  
Harry A. Atwater
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Crystal Growth ◽  
Incubation Time ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Grain Sizes ◽  
Random Nucleation ◽  
Nucleation Sites ◽  
Si Films

AbstractWith a selective nucleation and solid phase epitaxy (SNSPE) process, grain sizes of 10 μm have been achieved to date at 620°C in 100 nrm thick silicon films on amorphous SiO2, with potential for greater grain sizes. Selective nucleation occurs via a thin film reaction between a patterned array of 20 rnm thick indium islands which act as heterogeneous nucleation sites on the amorphous silicon starting material. Crystal growth proceeds by lateral solid phase epitaxy from the nucleation sites, during the incubation time for random nucleation. The largest achievable grain size by SNSPE is thus approximately the product of the incubation time and the solid phase epitaxy rate. Electronic dopants, such as B, P, and Al, are found to enhance the solid phase epitaxy rate and affect the nucleation rate.

One-dimensional cadmium hydroxide nanowires towards electrochemical supercapacitor

2015 ◽  
Vol 39 (12) ◽  
pp. 9124-9131 ◽  
Author(s):  
Savita Patil ◽  
Shrikant Raut ◽  
Ratnakar Gore ◽  
Babasaheb Sankapal
Keyword(s):  
Thin Film ◽  
Surface Area ◽  
Room Temperature ◽  
High Surface ◽  
High Surface Area ◽  
Temperature Synthesis ◽  
One Dimensional ◽  
Room Temperature Synthesis ◽  
Electrochemical Supercapacitor ◽  
Symmetric Supercapacitor

Room-temperature synthesis of Cd(OH)2 thin film consisting of high-surface-area nanowires. Device-grade development as a symmetric supercapacitor.

Photoelectron spectroscopy of thin-film Yb-Si(100) structures formed by solid phase epitaxy at 800 K

2004 ◽  
Vol 30 (9) ◽  
pp. 738-740
Author(s):  
D. V. Vyalikh ◽  
M. V. Kuzmin ◽  
M. A. Mittsev ◽  
S. L. Molodtsov
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Extended near-IR Spectral Sensitivity and Electroluminescence Properties of Silicon Diode Structure with GaSb/Si Composite Layer

2016 ◽  
Vol 247 ◽  
pp. 61-65 ◽  
Author(s):  
Dmitry L. Goroshko ◽  
Alexander V. Shevlyagin ◽  
Evgeniy Anatolievich Chusovitin ◽  
Konstantin N. Galkin ◽  
Igor M. Chernev ◽  
...  
Keyword(s):  
Spectral Sensitivity ◽  
Wavelength Range ◽  
Room Temperature ◽  
Solid Phase ◽  
Composite Layer ◽  
Solid Phase Epitaxy ◽  
Silicon Matrix ◽  
Near Ir ◽  
Wide Wavelength Range ◽  
Integral Sensitivity

An array of GaSb nanocrystallites (NCs) was formed on Si(001) substrate by solid-phase epitaxy at 500 °C. Owing to the embedded GaSb NCs, p+‑Si/NC‑GaSb/n‑Si mesa diode spectral sensitivity has extended up to 1.6 µm at room temperature, and its integral sensitivity has increased by 4–5% in the wavelength range of 1200–1600 nm, as compared to a conventional Si diode. This result was achieved by embedding only 10 nm of GaSb in the form of NCs inside a silicon matrix. In addition, we could obtain a significant electroluminescence (EL) signal at 120 K in a very wide wavelength range from 1.3 to 2.1 µm (0.95–0.59 eV). The EL spectrum has a broad maximum at 1700 nm (0.73 eV). The threshold pumping current density was as low as 0.75 A/cm2.

Role of the Surface Steps on the Growth of CrSi2 on {111} Silicon.

1995 ◽  
Vol 402 ◽  
Author(s):  
André M. Rocher ◽  
André Oustry ◽  
Marie José David ◽  
Michel Caumont
Keyword(s):  
Elastic Energy ◽  
Solid Phase ◽  
Misfit Dislocations ◽  
Solid Phase Epitaxy ◽  
Step Width ◽  
Orientation Relationships ◽  
Edge Type ◽  
Burgers Vector ◽  
Surface Steps

AbstractCrSi2 layers grown by solid phase epitaxy on a nominal (111) Si surface exhibit in the same proportion two different orientation relationships, named A and B. When CrSi2 is deposited on a 8° vicinal (111) Si surface, B-type orientation is favoured with respect to the A type. This result can be explained by the fact that both the step width introduced by the miscut and the planar coincidence between {1100}Crsi2 and {111}Si are nearly equal to 23Å. Edge type misfit dislocations are observed at the interface with the same spacing. Their Burgers vector component along [111] is almost compensated by the atomic steps along the <110> directions. The role of the steps is discussed in term of elastic energy. Steps introduce misfit dislocations which make possible coherent growth of the B type orientation.

Self-Organization of Cobalt-Silicide Nanoislands on Stepped Si(111) as a Function of Growth Method

2008 ◽  
Vol 8 (2) ◽  
pp. 801-805 ◽  
Author(s):  
I. Goldfarb ◽  
M. Levinshtein
Keyword(s):  
Size Effects ◽  
Room Temperature ◽  
Solid Phase ◽  
Self Organization ◽  
Solid Phase Epitaxy ◽  
Silicide Formation ◽  
Reactive Deposition ◽  
Growth Method ◽  
Single Electron Devices ◽  
Growth Methods

When silicides, such as CoSi2, are grown in the form of nanoislands they frequently exhibit nanometer size effects, which can be useful for single electron devices. For such devices, however, lateral self-organization is required. In this work, step-aided self-organization of CoSi2 nanoislands is demonstrated on a vicinal (stepped) Si(111) substrate. Straight and equidistant steps or step-bunches are routinely obtained on the vicinal Si(111), creating almost ideal template for self-organization. Two growth methods were examined: solid-phase epitaxy (SPE), where Co was deposited at room temperature and annealed to promote silicide formation, and reactive deposition epitaxy (RDE) where Co was deposited at elevated temperature. While the latter did not result in any noticeable ordering, due to instantaneous reaction with Si in course of deposition, the former lead to preferential occupation of step-bunch sites by the silicide nanoislands. Furthermore, self-limiting growth caused narrow distribution of island sizes and island–island separation distances.

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