Double bridge technique for temperature compensation of piezoresistive pressure sensor

2002 ◽  
Author(s):  
Po-Tsung Hsieh ◽  
Y. M. Chang ◽  
J. M. Xu ◽  
Chii-Maw Uang
Keyword(s):  
Pressure Sensor ◽  
Temperature Compensation ◽  
Piezoresistive Pressure Sensor

scholarly journals A Highly Accurate, Polynomial-Based Digital Temperature Compensation for Piezoresistive Pressure Sensor in 180 nm CMOS Technology

Sensors ◽  
2020 ◽  
Vol 20 (18) ◽  
pp. 5256
Author(s):  
Imran Ali ◽  
Muhammad Asif ◽  
Khuram Shehzad ◽  
Muhammad Riaz Ur Rehman ◽  
Dong Gyu Kim ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Temperature Compensation ◽  
Absolute Temperature ◽  
Cmos Process ◽  
Measured Temperature ◽  
Signal Conditioning ◽  
Clock Frequency ◽  
Linear Temperature ◽  
Piezoresistive Pressure Sensor ◽  
Wide Range

Recently, piezoresistive-type (PRT) pressure sensors have been gaining attention in variety of applications due to their simplicity, low cost, miniature size and ruggedness. The electrical behavior of a pressure sensor is highly dependent on the temperature gradient which seriously degrades its reliability and reduces measurement accuracy. In this paper, polynomial-based adaptive digital temperature compensation is presented for automotive piezoresistive pressure sensor applications. The non-linear temperature dependency of a pressure sensor is accurately compensated for by incorporating opposite characteristics of the pressure sensor as a function of temperature. The compensation polynomial is fully implemented in a digital system and a scaling technique is introduced to enhance its accuracy. The resource sharing technique is adopted for minimizing controller area and power consumption. The negative temperature coefficient (NTC) instead of proportional to absolute temperature (PTAT) or complementary to absolute temperature (CTAT) is used as the temperature-sensing element since it offers the best temperature characteristics for grade 0 ambient temperature operating range according to the automotive electronics council (AEC) test qualification ACE-Q100. The shared structure approach uses an existing analog signal conditioning path, composed of a programmable gain amplifier (PGA) and an analog-to-digital converter (ADC). For improving the accuracy over wide range of temperature, a high-resolution sigma-delta ADC is integrated. The measured temperature compensation accuracy is within ±0.068% with full scale when temperature varies from −40 °C to 150 °C according to ACE-Q100. It takes 37 µs to compute the temperature compensation with a clock frequency of 10 MHz. The proposed technique is integrated in an automotive pressure sensor signal conditioning chip using a 180 nm complementary metal–oxide–semiconductor (CMOS) process.

scholarly journals A Smart High Accuracy Silicon Piezoresistive Pressure Sensor Temperature Compensation System

Sensors ◽  
2014 ◽  
Vol 14 (7) ◽  
pp. 12174-12190 ◽  
Author(s):  
Guanwu Zhou ◽  
Yulong Zhao ◽  
Fangfang Guo ◽  
Wenju Xu
Keyword(s):  
Pressure Sensor ◽  
Temperature Compensation ◽  
High Accuracy ◽  
Compensation System ◽  
Piezoresistive Pressure Sensor ◽  
Sensor Temperature

scholarly journals Passive Resistor Temperature Compensation for a High-Temperature Piezoresistive Pressure Sensor

Sensors ◽  
2016 ◽  
Vol 16 (7) ◽  
pp. 1142 ◽  
Author(s):  
Zong Yao ◽  
Ting Liang ◽  
Pinggang Jia ◽  
Yingping Hong ◽  
Lei Qi ◽  
...  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Temperature Compensation ◽  
Piezoresistive Pressure Sensor

scholarly journals Attachment of MEM piezoresistive silicon pressure sensor dies using different adhesives

2011 ◽  
Vol 65 (5) ◽  
pp. 497-505
Author(s):  
Vesna Jovic ◽  
Milan Matic ◽  
Branko Vukelic ◽  
Marko Starcevic ◽  
Milce Smiljanic ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Temperature Compensation ◽  
Pressure Sensors ◽  
Low Pressure ◽  
Glass Frit ◽  
Epoxy Adhesive ◽  
Internal Stresses ◽  
Linear Temperature ◽  
Piezoresistive Pressure Sensor ◽  
Glass Paste

This paper gives comparison and discussion of adhesives used for attachment of silicon piezoresistive pressure sensor dies. Special attention is paid on low pressure sensor dies because of their extreme sensitivity on stresses, which can arise from packaging procedure and applied materials. Commercially available adhesives ?Scotch Weld 2214 Hi-Temp? from ?3M Co.? and ?DM2700P/H848? from ?DIEMAT?, USA, were compared. First of them is aluminum filled epoxy adhesive and second is low melting temperature (LMT) glass paste. Comparing test results for low pressure sensor chips we found that LMT glass (glass frit) is better adhesive for this application. Applying LMT glass paste minimizes internal stresses caused by disagreement of coefficients of thermal expansions between sensor die and housing material. Also, it minimizes stresses introduced during applying external loads in the process of pressure measuring. Regarding the measurements, for the sensors installed with filled epoxy paste, resistor for compensation of temperature offset change had negative values in all cases, which means that linear temperature compensation, of sensors installed this way, would be impossible. In the sensors installed with LMT glass paste, all results, without exception, were in their common limits (values), which give the possibility of passive temperature compensation. Furthermore, LMT glass attachment can broaden temperature operating range of MEM silicon pressure sensors towards higher values, up to 120 ?C.

scholarly journals Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor

2021 ◽  
Author(s):  
REKHA DEVI ◽  
Sandeep Singh Gill
Keyword(s):  
Pressure Sensor ◽  
Temperature Compensation ◽  
Pressure Sensors ◽  
Negative Temperature ◽  
Device Fabrication ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Higher Temperature ◽  
Increasing Temperature ◽  
Silicon Based

Abstract In silicon-based piezoresistive pressure sensor, the accuracy of the sensor is affected mainly by thermal drift and the sensitivity of the sensor varies with the rise in temperature. Here, the temperature effects on the desired representation of the sensor are analysed .Use of smart material Carbon nanotubes ( CNT) and a few effective temperature compensation techniques are presented in this study to reduce the temperature effect on the accuracy of the sensor. Resistive compensation employed extra piezoresistors with Negative Temperature Coefficient of Resistivity (TCR) for temperature compensation. The attainment of the desired compensation techniques is highly compatible with the MEMS device fabrication. The compensated pressure sensor is supremacy for pressure measurement with temperature variations. Though various techniques have been suggested and put into actuality with successful attainment, the techniques featuring easy implementation and perfect compatibility with existing schemes are still blooming demanded to design a piezoresistive pressure sensor with perfect comprehensive performance. In this paper, CNT piezoresistive material has been employed as sensing elements for pressure sensor and compared with silicon in terms of output voltage and sensor performance degradation at higher temperature. Pressure sensors using CNT and silicon piezo resistive sensing materials were simulated on silicon (100) diaphragm by ANYSIS. Based on simulation results, silicon and CNT both pressure sensor also shows better results at near room temperature. With the increasing temperature it is observed that silicon pressure output underestimated by 23%.

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