scholarly journals Attachment of MEM piezoresistive silicon pressure sensor dies using different adhesives

2011 ◽  
Vol 65 (5) ◽  
pp. 497-505
Author(s):  
Vesna Jovic ◽  
Milan Matic ◽  
Branko Vukelic ◽  
Marko Starcevic ◽  
Milce Smiljanic ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Temperature Compensation ◽  
Pressure Sensors ◽  
Low Pressure ◽  
Glass Frit ◽  
Epoxy Adhesive ◽  
Internal Stresses ◽  
Linear Temperature ◽  
Piezoresistive Pressure Sensor ◽  
Glass Paste

This paper gives comparison and discussion of adhesives used for attachment of silicon piezoresistive pressure sensor dies. Special attention is paid on low pressure sensor dies because of their extreme sensitivity on stresses, which can arise from packaging procedure and applied materials. Commercially available adhesives ?Scotch Weld 2214 Hi-Temp? from ?3M Co.? and ?DM2700P/H848? from ?DIEMAT?, USA, were compared. First of them is aluminum filled epoxy adhesive and second is low melting temperature (LMT) glass paste. Comparing test results for low pressure sensor chips we found that LMT glass (glass frit) is better adhesive for this application. Applying LMT glass paste minimizes internal stresses caused by disagreement of coefficients of thermal expansions between sensor die and housing material. Also, it minimizes stresses introduced during applying external loads in the process of pressure measuring. Regarding the measurements, for the sensors installed with filled epoxy paste, resistor for compensation of temperature offset change had negative values in all cases, which means that linear temperature compensation, of sensors installed this way, would be impossible. In the sensors installed with LMT glass paste, all results, without exception, were in their common limits (values), which give the possibility of passive temperature compensation. Furthermore, LMT glass attachment can broaden temperature operating range of MEM silicon pressure sensors towards higher values, up to 120 ?C.

scholarly journals A Highly Accurate, Polynomial-Based Digital Temperature Compensation for Piezoresistive Pressure Sensor in 180 nm CMOS Technology

Sensors ◽  
2020 ◽  
Vol 20 (18) ◽  
pp. 5256
Author(s):  
Imran Ali ◽  
Muhammad Asif ◽  
Khuram Shehzad ◽  
Muhammad Riaz Ur Rehman ◽  
Dong Gyu Kim ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Temperature Compensation ◽  
Absolute Temperature ◽  
Cmos Process ◽  
Measured Temperature ◽  
Signal Conditioning ◽  
Clock Frequency ◽  
Linear Temperature ◽  
Piezoresistive Pressure Sensor ◽  
Wide Range

Recently, piezoresistive-type (PRT) pressure sensors have been gaining attention in variety of applications due to their simplicity, low cost, miniature size and ruggedness. The electrical behavior of a pressure sensor is highly dependent on the temperature gradient which seriously degrades its reliability and reduces measurement accuracy. In this paper, polynomial-based adaptive digital temperature compensation is presented for automotive piezoresistive pressure sensor applications. The non-linear temperature dependency of a pressure sensor is accurately compensated for by incorporating opposite characteristics of the pressure sensor as a function of temperature. The compensation polynomial is fully implemented in a digital system and a scaling technique is introduced to enhance its accuracy. The resource sharing technique is adopted for minimizing controller area and power consumption. The negative temperature coefficient (NTC) instead of proportional to absolute temperature (PTAT) or complementary to absolute temperature (CTAT) is used as the temperature-sensing element since it offers the best temperature characteristics for grade 0 ambient temperature operating range according to the automotive electronics council (AEC) test qualification ACE-Q100. The shared structure approach uses an existing analog signal conditioning path, composed of a programmable gain amplifier (PGA) and an analog-to-digital converter (ADC). For improving the accuracy over wide range of temperature, a high-resolution sigma-delta ADC is integrated. The measured temperature compensation accuracy is within ±0.068% with full scale when temperature varies from −40 °C to 150 °C according to ACE-Q100. It takes 37 µs to compute the temperature compensation with a clock frequency of 10 MHz. The proposed technique is integrated in an automotive pressure sensor signal conditioning chip using a 180 nm complementary metal–oxide–semiconductor (CMOS) process.

scholarly journals Performance Investigation of Carbon Nanotube Based Temperature Compensated Piezoresistive Pressure Sensor

2021 ◽  
Author(s):  
REKHA DEVI ◽  
Sandeep Singh Gill
Keyword(s):  
Pressure Sensor ◽  
Temperature Compensation ◽  
Pressure Sensors ◽  
Negative Temperature ◽  
Device Fabrication ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Higher Temperature ◽  
Increasing Temperature ◽  
Silicon Based

Abstract In silicon-based piezoresistive pressure sensor, the accuracy of the sensor is affected mainly by thermal drift and the sensitivity of the sensor varies with the rise in temperature. Here, the temperature effects on the desired representation of the sensor are analysed .Use of smart material Carbon nanotubes ( CNT) and a few effective temperature compensation techniques are presented in this study to reduce the temperature effect on the accuracy of the sensor. Resistive compensation employed extra piezoresistors with Negative Temperature Coefficient of Resistivity (TCR) for temperature compensation. The attainment of the desired compensation techniques is highly compatible with the MEMS device fabrication. The compensated pressure sensor is supremacy for pressure measurement with temperature variations. Though various techniques have been suggested and put into actuality with successful attainment, the techniques featuring easy implementation and perfect compatibility with existing schemes are still blooming demanded to design a piezoresistive pressure sensor with perfect comprehensive performance. In this paper, CNT piezoresistive material has been employed as sensing elements for pressure sensor and compared with silicon in terms of output voltage and sensor performance degradation at higher temperature. Pressure sensors using CNT and silicon piezo resistive sensing materials were simulated on silicon (100) diaphragm by ANYSIS. Based on simulation results, silicon and CNT both pressure sensor also shows better results at near room temperature. With the increasing temperature it is observed that silicon pressure output underestimated by 23%.

Design and Simulation of Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Output Voltage ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Constant Thickness ◽  
Piezoresistive Pressure Sensor ◽  
Wide Pressure Range ◽  
Processing Techniques ◽  
Wide Pressure

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.

Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure Sensor

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour
Keyword(s):  
Thermal Behavior ◽  
Modeling And Simulation ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Thermal Drift ◽  
Piezoresistive Pressure Sensor ◽  
Output Characteristics ◽  
Piezoresistive Pressure Sensors

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.

scholarly journals Nano Carbon Black-Based High Performance Wearable Pressure Sensors

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 664 ◽  
Author(s):  
Junsong Hu ◽  
Junsheng Yu ◽  
Ying Li ◽  
Xiaoqing Liao ◽  
Xingwu Yan ◽  
...  
Keyword(s):  
Carbon Black ◽  
Pressure Sensor ◽  
High Performance ◽  
Large Scale ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Wearable Electronics ◽  
Atmospheric Pollutant ◽  
Piezoresistive Pressure Sensor ◽  
Nano Carbon

The reasonable design pattern of flexible pressure sensors with excellent performance and prominent features including high sensitivity and a relatively wide workable linear range has attracted significant attention owing to their potential application in the advanced wearable electronics and artificial intelligence fields. Herein, nano carbon black from kerosene soot, an atmospheric pollutant generated during the insufficient burning of hydrocarbon fuels, was utilized as the conductive material with a bottom interdigitated textile electrode screen printed using silver paste to construct a piezoresistive pressure sensor with prominent performance. Owing to the distinct loose porous structure, the lumpy surface roughness of the fabric electrodes, and the softness of polydimethylsiloxane, the piezoresistive pressure sensor exhibited superior detection performance, including high sensitivity (31.63 kPa−1 within the range of 0–2 kPa), a relatively large feasible range (0–15 kPa), a low detection limit (2.26 pa), and a rapid response time (15 ms). Thus, these sensors act as outstanding candidates for detecting the human physiological signal and large-scale limb movement, showing their broad range of application prospects in the advanced wearable electronics field.

Design and Optimization of a Highly Sensitive and Linearity Piezoresistive Pressure Sensor Based on a Combination of Cross Beam-Peninsula-Membrane Structure

2017 ◽  
Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
High Sensitivity ◽  
Crystal Silicon ◽  
Nonlinearity Error ◽  
Trade Off ◽  
Design And Optimization ◽  
Piezoresistive Pressure Sensor ◽  
Piezoresistive Pressure Sensors

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.

scholarly journals Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1103
Author(s):  
Jae Sang Heo ◽  
Keon Woo Lee ◽  
Jun Ho Lee ◽  
Seung Beom Shin ◽  
Jeong Wan Jo ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Pressure Sensor ◽  
Pressure Range ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Low Pressure ◽  
Electronic Textiles ◽  
Carbon Nanotube Fiber ◽  
Cnt Fiber ◽  
Walled Carbon Nanotubes

Among various wearable health-monitoring electronics, electronic textiles (e-textiles) have been considered as an appropriate alternative for a convenient self-diagnosis approach. However, for the realization of the wearable e-textiles capable of detecting subtle human physiological signals, the low-sensing performances still remain as a challenge. In this study, a fiber transistor-type ultra-sensitive pressure sensor (FTPS) with a new architecture that is thread-like suspended dry-spun carbon nanotube (CNT) fiber source (S)/drain (D) electrodes is proposed as the first proof of concept for the detection of very low-pressure stimuli. As a result, the pressure sensor shows an ultra-high sensitivity of ~3050 Pa−1 and a response/recovery time of 258/114 ms in the very low-pressure range of <300 Pa as the fiber transistor was operated in the linear region (VDS = −0.1 V). Also, it was observed that the pressure-sensing characteristics are highly dependent on the contact pressure between the top CNT fiber S/D electrodes and the single-walled carbon nanotubes (SWCNTs) channel layer due to the air-gap made by the suspended S/D electrode fibers on the channel layers of fiber transistors. Furthermore, due to their remarkable sensitivity in the low-pressure range, an acoustic wave that has a very tiny pressure could be detected using the FTPS.

scholarly journals A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 337 ◽  
Author(s):  
Peishuai Song ◽  
Chaowei Si ◽  
Mingliang Zhang ◽  
Yongmei Zhao ◽  
Yurong He ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Blood Pressure Measurement ◽  
Pressure Sensors ◽  
Silicon On Insulator ◽  
Bonding Layer ◽  
Chip Area ◽  
Piezoresistive Pressure Sensor ◽  
Temporary Bonding ◽  
Bonding Technology ◽  
Sensing Membrane

A miniature piezoresistive pressure sensor fabricated by temporary bonding technology was reported in this paper. The sensing membrane was formed on the device layer of an SOI (Silicon-On-Insulator) wafer, which was bonded to borosilicate glass (Borofloat 33, BF33) wafer for supporting before releasing with Cu-Cu bonding after boron doping and electrode patterning. The handle layer was bonded to another BF33 wafer after thinning and etching. Finally, the substrate BF33 wafer was thinned by chemical mechanical polishing (CMP) to reduce the total device thickness. The copper temporary bonding layer was removed by acid solution after dicing to release the sensing membrane. The chip area of the fabricated pressure sensor was of 1600 μm × 650 μm × 104 μm, and the size of a sensing membrane was of 100 μm × 100 μm × 2 μm. A higher sensitivity of 36 μV/(V∙kPa) in the range of 0–180 kPa was obtained. By further reducing the width, the fabricated miniature pressure sensor could be easily mounted in a medical catheter for the blood pressure measurement.

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