scholarly journals Failure analysis of GaN-based current-injected vertical-cavity surface-emitting lasers

Author(s):  
Joachim Piprek
2012 ◽  
Vol 1432 ◽  
Author(s):  
Robert W. Herrick

ABSTRACTVertical-Cavity Surface-Emitting Lasers are making up a large and growing share of the world’s production of semiconductor lasers. But the 850 nm GaAs quantum well VCSELs that make up most of present product are highly vulnerable to dislocation networks. In this paper, we discuss how materials selection affects the reliability of semiconductor lasers generally. We then describe the most common failure mechanisms observed in VCSELs, and what precautions are used to prevent them. We finish with a brief discussion of reliability testing and failure analysis.


1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-3 ◽  
Author(s):  
J. Jacquet ◽  
P. Salet ◽  
A. Plais ◽  
F. Brillouet ◽  
E. Derouin ◽  
...  

1993 ◽  
Vol 29 (5) ◽  
pp. 466 ◽  
Author(s):  
K.D. Choquette ◽  
N. Tabatabaie ◽  
R.E. Leibenguth

1993 ◽  
Vol 29 (10) ◽  
pp. 918-919 ◽  
Author(s):  
P. Ressel ◽  
H. Strusny ◽  
S. Gramlich ◽  
U. Zeimer ◽  
J. Sebastian ◽  
...  

2004 ◽  
Vol 04 (04) ◽  
pp. L635-L641
Author(s):  
STEFANO BERI ◽  
PETER V. E. McCLINTOCK ◽  
RICCARDO MANNELLA

A numerical approach based on dynamic importance sampling (DIMS) is applied to investigate polarization switches in vertical-cavity surface-emitting lasers. A polarization switch is described as an activation process in a two-dimensional nonequilibrium system. DIMS accelerates the simulations and allows access to noise intensities that were previously forbidden, revealing qualitative changes in the shape of the transition paths with noise intensity.


Sign in / Sign up

Export Citation Format

Share Document